WMO80N08TS Todos los transistores

 

WMO80N08TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMO80N08TS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 133 W
   Voltaje máximo drenador - fuente |Vds|: 80 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 80 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 68.7 nC
   Tiempo de subida (tr): 75 nS
   Conductancia de drenaje-sustrato (Cd): 220 pF
   Resistencia entre drenaje y fuente RDS(on): 0.012 Ohm
   Paquete / Cubierta: TO252

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WMO80N08TS Datasheet (PDF)

 ..1. Size:501K  way-on
wmo80n08ts.pdf

WMO80N08TS WMO80N08TS

WMO80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 80V, I = 80A DS DR

 7.1. Size:609K  way-on
wmo80n06ts.pdf

WMO80N08TS WMO80N08TS

WMO80N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 60V, I = 80A DS DTO-252R

 7.2. Size:610K  way-on
wmo80n03t1.pdf

WMO80N08TS WMO80N08TS

WMO80N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures GTO-252 V = 30V, I = 80A DS DR

 9.1. Size:672K  way-on
wml80r480s wmo80r480s wmk80r480s wmn80r480s wmm80r480s wmj80r480s.pdf

WMO80N08TS WMO80N08TS

WML R480S, WM 0S L80R480S, WMO80R MK80R480WMN , WMM80R MJ80R480N80R480S, R480S, WM 0S 800V 0.4 S TSuper Junction Power MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOST

 9.2. Size:668K  way-on
wmm80r1k5s wmn80r1k5s wmk80r1k5s wml80r1k5s wmp80r1k5s wmo80r1k5s.pdf

WMO80N08TS WMO80N08TS

WMM8 1K5S, WM 5S 80R1K5S, WMN80R1 MK80R1K5WML8 1K5S, WM 5S 80R1K5S, WMP80R1 MO80R1K5 800V 1.26 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO

 9.3. Size:669K  way-on
wmm80r1k0s wmn80r1k0s wmk80r1k0s wml80r1k0s wmp80r1k0s wmo80r1k0s.pdf

WMO80N08TS WMO80N08TS

WMM8 1K0S, WM 0S 80R1K0S, WMN80R1 MK80R1K0WML8 1K0S, WM 0S 80R1K0S, WMP80R1 MO80R1K0 800V 0.87 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO

 9.4. Size:661K  way-on
wmm80r720s wmn80r720s wmk80r720s wml80r720s wmp80r720s wmo80r720s.pdf

WMO80N08TS WMO80N08TS

WMM R720S, WM 0S M80R720S, WMN80R MK80R720WML R720S, WM 0S L80R720S, WMP80R MO80R720 800V 0.68 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO

 9.5. Size:632K  way-on
wmo80p04ts.pdf

WMO80N08TS WMO80N08TS

WMO80P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO80P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.DSFeatures GTO-252 V = -40V, I = -80A DS DR

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