WMO90P04TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO90P04TS
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 108.7 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 95 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 128.9 nC
Tiempo de subida (tr): 19.5 nS
Conductancia de drenaje-sustrato (Cd): 510 pF
Resistencia entre drenaje y fuente RDS(on): 0.0068 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET WMO90P04TS
WMO90P04TS Datasheet (PDF)
wmo90p04ts.pdf
WMO90P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO90P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures GTO-252 V = -40V, I = -95A DS DR
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WMO90P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO90P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = - 30V, I = - 90A DS DTO-252R
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