WMQ040N03LG2 Todos los transistores

 

WMQ040N03LG2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMQ040N03LG2
   Código: 040N03L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 24.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 43 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 15.9 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 680 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: PDFN3030-8L

 Búsqueda de reemplazo de MOSFET WMQ040N03LG2

 

WMQ040N03LG2 Datasheet (PDF)

 ..1. Size:616K  way-on
wmq040n03lg2.pdf

WMQ040N03LG2
WMQ040N03LG2

WMQ040N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description DDDDDDD DWMQ040N03LG2 uses Wayon's 2nd generation power trench MOSFET SGStechnology that has been especially tailored to minimize the on-state SSSGSresistance and yet maintain superior switching performance. This PDFN3030-8Ldevice is well suited for high efficiency fast switching appl

 9.1. Size:660K  way-on
wmq048nv6hg4.pdf

WMQ040N03LG2
WMQ040N03LG2

WMQ048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ048NV6HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize GSSSSGthe on-state resistance and yet maintain superior switching Sperformance. This device is well suited for high efficiency fast PDFN3030-8Lswitching a

 9.2. Size:616K  way-on
wmq048nv6lg4.pdf

WMQ040N03LG2
WMQ040N03LG2

WMQ048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDescription DDDDDD DWMQ048NV6LG4 uses Wayon's 4th generation power trench SGSMOSFET technology that has been especially tailored to minimize SSSGSthe on-state resistance and yet maintain superior switching PDFN3030-8Lperformance. This device is well suited for high efficiency fast switching ap

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top

 


WMQ040N03LG2
  WMQ040N03LG2
  WMQ040N03LG2
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100

 

 

 
Back to Top