STF2456 Todos los transistores

Gree r r P Pr Pr Prod STF2456 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 18.5 @ VGS=4.5V Suface Mount Package. 20.0 @ VGS=4.0V 24V 7.0A 20.5 @ VGS=3.7V ESD Protected. 22.5 @ VGS=3.1V 28.0 @ VGS=2.5V G2

Green Product STF2458 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 9.5 @ VGS=4.5V Suface Mount Package. 10.2 @ VGS=4.0V 24V 10A 10.4 @ VGS=3.7V ESD Protected. 11.5 @ VGS=3.1V 14.0 @ VGS=2.5V G2 Bottom Drain

Green Product STF2459A a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 6.2 @ VGS=10V Suface Mount Package. 7.5 @ VGS=4.5V ESD Protected. 8.0 @ VGS=4.0V 24V 12A 8.6 @ VGS=3.7V 10.3 @ VGS=3.1V 16.3 @ VGS=2.5V

Green Product STF2454A a S mHop Microelectronics C orp. Ver 3.2 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 14.0 @ VGS=4.5V Suface Mount Package. 14.3 @ VGS=4.0V 24V 8.6A 14.5 @ VGS=3.7V ESD Protected. 16.5 @ VGS=3.1V 20.0 @ VGS=2.5V Bottom Drain Co

Green Product STF2454 a S mHop Microelectronics C orp. Ver 2.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 14.0 @ VGS=4.5V Suface Mount Package. 14.3 @ VGS=4.0V 24V 8.0A 14.5 @ VGS=3.7V ESD Protected. 16.5 @ VGS=3.1V 20.0 @ VGS=2.5V G2 Bottom Drain

Green Product STF2455 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 6.2 @ VGS=4.5V Suface Mount Package. 6.3 @ VGS=4.0V 24V 13A 6.5 @ VGS=3.7V ESD Protected. 7.0 @ VGS=3.1V 8.5 @ VGS=2.5V D D D D G G S T D

Gree r r P Pr Pr Pro STF2458A a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 10.0 @ VGS=4.5V Suface Mount Package. 10.5 @ VGS=4.0V 24V 10A 11.0 @ VGS=3.7V ESD Protected. 12.0 @ VGS=3.1V 15.5 @ VGS=2.5V Bott