WMQ30N04TS Todos los transistores

 

WMQ30N04TS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMQ30N04TS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 18.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.6 nS

Cossⓘ - Capacitancia de salida: 108 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: PDFN3030-8L

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WMQ30N04TS datasheet

 ..1. Size:658K  way-on
wmq30n04ts.pdf pdf_icon

WMQ30N04TS

WMQ30N04TS 40V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ30N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S G S S S S G maintain superior switching performance. S PDFN3030-8L Features V = 40V, I = 30A DS D R

 7.1. Size:640K  way-on
wmq30n03t2.pdf pdf_icon

WMQ30N04TS

WMQ30N03T2 30V N-Channel Enhancement Mode Power MOSFET Description D D D WMQ30N03T2 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = 30V, I = 30A DS D R

 7.2. Size:594K  way-on
wmq30n02t1.pdf pdf_icon

WMQ30N04TS

WMQ30N02T1 20V N-Channel Enhancement Mode Power MOSFET Description D D D WMQ30N02T1 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = 20V, I =75A DS D R

 7.3. Size:479K  way-on
wmq30n06ts.pdf pdf_icon

WMQ30N04TS

WMQ30N06TS 60V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ30N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S G S S S S maintain superior switching performance. G S PDFN3030-8L Features V = 60V, I = 30A DS D R

Otros transistores... WMQ25P04T1 , WMQ25P06TS , WMQ26P02TS , WMQ28N03T1 , WMQ30DN04TS , WMQ30DP03TS , WMQ30N02T1 , WMQ30N03T2 , RFP50N06 , WMQ30N06TS , WMQ30P03T1 , WMQ30P04T1 , WMQ35P02TS , WMQ37N03T1 , WMQ40DN03T1 , WMQ40N03T1 , WMQ42P03T1 .

History: FDMS7558S | JMSL1040PGQ | CM4N65C | 2SK1826 | IRFU3806PBF | DG2N65-220

 

 

 

 

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