WMQ40N03T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMQ40N03T1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 178 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: PDFN3030-8L
Búsqueda de reemplazo de WMQ40N03T1 MOSFET
WMQ40N03T1 Datasheet (PDF)
wmq40n03t1.pdf
WMQ40N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ40N03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet SGSmaintain superior switching performance. SSSGSFeatures PDFN3030-8L V = 30V, I = 40A DS DR
wmq40dn03t1.pdf
WMQ40DN03T1 30V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2D1D2D1D1D2WMQ40DN03T1 uses advanced power trench technology that D1D2has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1G2G1S2S2G1Features G2S1 V = 30V, I = 40A DS DPDFN3030-8LR
Otros transistores... WMQ30N03T2 , WMQ30N04TS , WMQ30N06TS , WMQ30P03T1 , WMQ30P04T1 , WMQ35P02TS , WMQ37N03T1 , WMQ40DN03T1 , STF13NM60N , WMQ42P03T1 , WMQ46N03T1 , WMQ50N04T1 , WMQ50P03T1 , WMQ55N04T1 , WMQ55P02T1 , WMQ60P02TS , WMQ80N03T1 .
History: BSC130P03LSG
History: BSC130P03LSG
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