WMR05N10TS MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

WMR05N10TS datasheet

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WMR05N10TS 100V N-Channel Enhancement Mode Power MOSFET G D Pin1 D S Description D S D S D D WMR05N10TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet G maintain superior switching performance. D D Features DFN2020-6L V =100V, I = 5A DS D R

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WMR05P04TS 40V P-Channel Enhancement Mode Power MOSFET G D Pin1 D Description S D S D S D D WMR05P04TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G D D Features DFN2020-6L V = -40V, I = -5A DS D R

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WMR050N03LG4 30V N-Channel Enhancement Mode Power MOSFET G D Pin1 D S Description D S D S D D D WMR050N03LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state G D resistance and yet maintain superior switching performance. This D DFN2020-6L device is well suited for high efficiency fast switching appli

Otros transistores... WMQ46N03T1 , WMQ50N04T1 , WMQ50P03T1 , WMQ55N04T1 , WMQ55P02T1 , WMQ60P02TS , WMQ80N03T1 , WMR050N03LG4 , 7N60 , WMR05P04TS , WMR07N03T1 , WMR07N06TS , WMR07P03TS , WMR09N02T1 , WMR10N03T1 , WMR12N03T1 , WMR12P02T1 .