WMR05N10TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMR05N10TS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1.5 nS
Cossⓘ - Capacitancia de salida: 14 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
Paquete / Cubierta: DFN2020-6L
Búsqueda de reemplazo de WMR05N10TS MOSFET
WMR05N10TS Datasheet (PDF)
wmr05n10ts.pdf

WMR05N10TS 100V N-Channel Enhancement Mode Power MOSFET GDPin1DSDescriptionDSDSDDWMR05N10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. DDFeatures DFN2020-6L V =100V, I = 5A DS DR
wmr05p04ts.pdf

WMR05P04TS 40V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWMR05P04TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -40V, I = -5A DS DR
wmr050n03lg4.pdf

WMR050N03LG4 30V N-Channel Enhancement Mode Power MOSFET GDPin1DSDescriptionDSDSDDDWMR050N03LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state GDresistance and yet maintain superior switching performance. This DDFN2020-6Ldevice is well suited for high efficiency fast switching appli
Otros transistores... WMQ46N03T1 , WMQ50N04T1 , WMQ50P03T1 , WMQ55N04T1 , WMQ55P02T1 , WMQ60P02TS , WMQ80N03T1 , WMR050N03LG4 , IRF830 , WMR05P04TS , WMR07N03T1 , WMR07N06TS , WMR07P03TS , WMR09N02T1 , WMR10N03T1 , WMR12N03T1 , WMR12P02T1 .
History: BSC265N10LSFG | BSC152N10NSFG
History: BSC265N10LSFG | BSC152N10NSFG



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