WMS08DH04T1 Todos los transistores

 

WMS08DH04T1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMS08DH04T1

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: SOP8

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WMS08DH04T1 datasheet

 ..1. Size:846K  way-on
 wms08dh04t1.pdf pdf_icon

WMS08DH04T1

WMS08DH04T1 40V N+P Dual Channel Enhancement Mode Power MOSFET Description D1 D1 D2 WMS08DH04T1 uses advanced power trench technology that has been D2 especially tailored to minimize the on-state resistance and yet maintain S1 G1 superior switching performance. S2 G2 Features SOP-8L N - Channel V = 40V, I = 7.5A DS D R

 8.1. Size:764K  way-on
 wms08dp03ts.pdf pdf_icon

WMS08DH04T1

WMS08DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1 Description D1 D2 WMS08DP03TS uses advanced power trench technology that has D2 been especially tailored to minimize the on-state resistance and yet S1 maintain superior switching performance. G1 S2 G2 Features SOP-8L V = -30V, I = -8A DS D R

 8.2. Size:958K  way-on
 wms08dn06ts.pdf pdf_icon

WMS08DH04T1

WMS08DN06TS 60V Dual N-Channel Enhancement Mode Power MOSFET D1 Description D1 D2 D2 WMS08DN06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1 G1 maintain superior switching performance. S2 G2 Features SOP-8L V = 60V, I = 8A DS D R

 9.1. Size:764K  way-on
 wms08p03t1.pdf pdf_icon

WMS08DH04T1

WMS08P03T1 30V P-Channel Enhancement Mode Power MOSFET Description D WMS08P03T1 uses advanced power trench technology that has D D been especially tailored to minimize the on-state resistance and D yet maintain superior switching performance. S Features S S G V = -30V, I = -8A DS D SOP-8L R

MOSTRAR MÁS

Otros transistores... WMS04N10TS , WMS04P10TS , WMS05P04TS , WMS05P06T1 , WMS05P10TS , WMS06N10TS , WMS06N15T2 , WMS06P04T1 , IRFZ44 , WMS08DN06TS , WMS08DP03TS , WMS08N06TS , WMS08P03T1 , WMS08P04TS , WMS090DNV6LG4 , WMS090N04LG2 , WMS090NV6LG4 .

History: 2SK2007 | HM1N60R | 2SK2063 | IPD600N25N3 | CRTD030N04L | IPB180N04S4L-H0 | HM1N50MR

 

 

 

 

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