WMS090N04LG2 Todos los transistores

 

WMS090N04LG2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMS090N04LG2
   Código: S090N04L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 7.9 nC
   trⓘ - Tiempo de subida: 4.5 nS
   Cossⓘ - Capacitancia de salida: 247 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: SOP-8L
 

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WMS090N04LG2 Datasheet (PDF)

 ..1. Size:746K  way-on
 wms090n04lg2.pdf pdf_icon

WMS090N04LG2

WMS090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS090N04LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

 7.1. Size:783K  way-on
 wms090nv6lg4.pdf pdf_icon

WMS090N04LG2

WMS090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS090NV6LG4 uses Wayon's 4th generation power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SSresistance and yet maintain superior switching performance. This GSOP-8Ldevice is well suited for high efficiency fast switching applications. Features

 8.1. Size:979K  way-on
 wms090dnv6lg4.pdf pdf_icon

WMS090N04LG2

WMS090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1Description D1D2D2WMS090DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8L

 9.1. Size:772K  way-on
 wms09p02ts.pdf pdf_icon

WMS090N04LG2

WMS09P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS09P02TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -20V, I = -9A DS DR

MOSTRAR MÁS

Otros transistores... WMS06P04T1 , WMS08DH04T1 , WMS08DN06TS , WMS08DP03TS , WMS08N06TS , WMS08P03T1 , WMS08P04TS , WMS090DNV6LG4 , IRF3710 , WMS090NV6LG4 , WMS099N10LGS , WMS09DP03TS , WMS09N06TS , WMS09P02TS , WMS09P06TS , WMS10DH04TS , WMS10DN04TS .

History: HSD6004 | WST3407A

 

 
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