FDS3590 Todos los transistores

 

FDS3590 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS3590
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 25 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 171 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
   Paquete / Cubierta: SO-8
 

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FDS3590 Datasheet (PDF)

 ..1. Size:86K  fairchild semi
 fds3590.pdf pdf_icon

FDS3590

November 2000FDS359080V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 6.5 A, 80 V RDS(ON) = 39 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 44 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate chargeThese MOSFETs feature faster

 9.1. Size:81K  fairchild semi
 fds3570.pdf pdf_icon

FDS3590

December 2000FDS357080V N-Channel PowerTrench MOSFETGeneral Description Features 9 A, 80 V. RDS(ON) = 0.020 @ VGS = 10 VThis N-Channel Logic Level MOSFET has been designedspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.023 @ VGS = 6 V.converters using either synchronous or conventionalswitching PWM controllers. Fast swi

 9.2. Size:83K  fairchild semi
 fds3580.pdf pdf_icon

FDS3590

December 2000FDS358080V N-Channel PowerTrench MOSFETGeneral Description Features 7.6 A, 80 V. RDS(ON) = 0.029 @ VGS = 10 VThis N-Channel MOSFET has been designed specificallyto improve the overall efficiency of DC/DC converters usingRDS(ON) = 0.033 @ VGS = 6 V.either synchronous or conventional switching PWMcontrollers. Low gate charge (3

 9.3. Size:86K  fairchild semi
 fds3512.pdf pdf_icon

FDS3590

May 2001 FDS3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.0 A, 80 V RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (13nC Typical) These MO

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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