FDS3590 Todos los transistores

 

FDS3590 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS3590

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 171 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm

Encapsulados: SO-8

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FDS3590 datasheet

 ..1. Size:86K  fairchild semi
 fds3590.pdf pdf_icon

FDS3590

November 2000 FDS3590 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 6.5 A, 80 V RDS(ON) = 39 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 44 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge These MOSFETs feature faster

 9.1. Size:81K  fairchild semi
 fds3570.pdf pdf_icon

FDS3590

December 2000 FDS3570 80V N-Channel PowerTrench MOSFET General Description Features 9 A, 80 V. RDS(ON) = 0.020 @ VGS = 10 V This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.023 @ VGS = 6 V. converters using either synchronous or conventional switching PWM controllers. Fast swi

 9.2. Size:83K  fairchild semi
 fds3580.pdf pdf_icon

FDS3590

December 2000 FDS3580 80V N-Channel PowerTrench MOSFET General Description Features 7.6 A, 80 V. RDS(ON) = 0.029 @ VGS = 10 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.033 @ VGS = 6 V. either synchronous or conventional switching PWM controllers. Low gate charge (3

 9.3. Size:86K  fairchild semi
 fds3512.pdf pdf_icon

FDS3590

May 2001 FDS3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.0 A, 80 V RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (13nC Typical) These MO

MOSTRAR MÁS

Otros transistores... STF2456 , FDS2672 , STF2455 , FDS2672F085 , STF2454A , FDS2734 , FDS3512 , FDS3572 , NCEP15T14 , FDS3672 , STF2454 , FDS3692 , STF06N20 , FDS3890 , FDS3992 , STE339S , FDS4141 .

History: WMQ25P04T1 | FCMT180N65S3

 

 

 

 

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