WMS14DN03T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMS14DN03T1
   Código: S14DN03
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 9.5 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
   Paquete / Cubierta: SOP-8L

Búsqueda de reemplazo de MOSFET WMS14DN03T1

WMS14DN03T1 Datasheet (PDF)

..1. Size:795K way-on
wms14dn03t1.pdf

WMS14DN03T1 30V Dual N-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2D2WMS14DN03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G1maintain superior switching performance. S2G2Features SOP-8L V = 30V, I = 14A DS DR

9.1. Size:772K way-on
wms140dnv6lg4.pdf

WMS140DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1D1DescriptionD2D2WMS140DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8LFe

9.2. Size:761K way-on
wms14p03t1.pdf

WMS14P03T1 30V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS14P03T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -14A DS DR

9.3. Size:868K way-on
wms140nv6lg4.pdf

WMS140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS140NV6LG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize Sthe on-state resistance and yet maintain superior switching SSperformance. This device is well suited for high efficiency fast Gswitching applications. SOP-8LFeatures

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