FDS3692 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS3692
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET FDS3692

FDS3692 Datasheet (PDF)

..1. Size:277K fairchild semi
fds3692.pdf

September 2002FDS3692N-Channel PowerTrench MOSFET100V, 4.5A, 60mFeatures Applications rDS(ON) = 50m (Typ.), VGS = 10V, ID = 4.5A DC/DC converters and Off-Line UPS Qg(tot) = 11nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rect

9.1. Size:89K fairchild semi
fds3601.pdf

August 2001FDS3601100V Dual N-Channel PowerTrench MOSFETGeneral Description FeaturesThese N-Channel MOSFETs have been designed 1.3 A, 100 V. RDS(ON) = 480 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 530 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Fast switching spe

9.2. Size:205K fairchild semi
fds3670.pdf

January 2000PRELIMINARYFDS3670100V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 6.3 A, 100 V. RDS(ON) = 0.030 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.033 @ VGS = 6 V.converters using either synchronous or conventionalswitching PWM controllers. Low gate charge (57 nC typ

9.3. Size:266K fairchild semi
fds3672.pdf

March 2003FDS3672N-Channel PowerTrench MOSFET100V, 7.5A, 22mFeatures Applications rDS(ON) = 19m (Typ.), VGS = 10V, ID = 7.5A DC/DC converters and Off-Line UPS Qg(tot) = 28nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifie

9.4. Size:88K fairchild semi
fds3612.pdf

March 2001 FDS3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.4 A, 100 V. RDS(ON) = 120 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 130 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Fast switching spe

9.5. Size:274K fairchild semi
fds3682.pdf

September 2002FDS3682N-Channel PowerTrench MOSFET100V, 6A, 35mFeatures Applications rDS(ON) = 30m (Typ.), VGS = 10V, ID = 6A DC/DC converters and Off-Line UPS Qg(tot) = 19nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifie

9.6. Size:361K onsemi
fds3672.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.7. Size:827K cn vbsemi
fds3672.pdf

FDS3672www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses100 23 nC0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO-8

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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