SL100N03R Todos los transistores

 

SL100N03R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SL100N03R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 70 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 100 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 30 nC
   Tiempo de subida (tr): 28 nS
   Conductancia de drenaje-sustrato (Cd): 393 pF
   Resistencia entre drenaje y fuente RDS(on): 0.004 Ohm
   Paquete / Cubierta: PDFN5X6-8L

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SL100N03R Datasheet (PDF)

 ..1. Size:1244K  slkor
sl100n03r.pdf

SL100N03R
SL100N03R

SL100N03R N-Channel Enhancement Mode Power MOSFETDescription This Power MOSFET is produced using advanced Trench technology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DC power conversion, load switch and industrial power applications. Features PDFN5*6-8L VDS=30VI

 7.1. Size:1740K  slkor
sl100n08.pdf

SL100N03R
SL100N03R

SL100N08N-Channel Power MOSFET General Features VDS =80V,I =100A D RDS(ON)

 9.1. Size:17K  advanced-semi
cbsl100.pdf

SL100N03R

CBSL100NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) A .080x45 B FULL R(4X).060 RFEATURES: EMD Input Matching Network C .1925 F Omnigold Metalization System G H NI LK JMAXIMUM RATINGS MINIMUM MAXIMUMDIMinches / mm inches / mmIC 25 A .220 / 5.59 .230 / 5.

 9.2. Size:860K  slkor
sl1002b.pdf

SL100N03R
SL100N03R

SL1002BN-Ch 100V Fast Switching MOSFETs Green Device Available Product Summary Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench BVDSS RDSON ID technology 100V 310m 2 A Description SOT23 Pin Configuration The SL1002B is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for m

 9.3. Size:400K  teamasia
sl100.pdf

SL100N03R
SL100N03R

CEOCBOEBOA DCj stgCEOC BCBOC EEBOE CCBOCB EEBOEB CC CEC CEC BC BoboCB E

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