SL4410 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SL4410
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 4.2 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 20 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 28.3 nC
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 265 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0059 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET SL4410

SL4410 Datasheet (PDF)

..1. Size:6334K slkor
sl4410.pdf

SL4410N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/20A,DD RDS(ON)= 5.9m (max.) @ VGS= 10V RDS(ON)= 7.9m (max.) @ VGS= 4.5VS 100% UIS + Rg TestedSSG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant)( 5,6,7,8 )D D D D(4)ApplicationsG Power Management in Notebook Computer, Portable Equipm

0.1. Size:330K international rectifier
irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf

IRFB4410ZPbFIRFS4410ZPbFIRFSL4410ZPbFHEXFET Power MOSFETApplicationsDVDSSl High Efficiency Synchronous Rectification in SMPS 100Vl Uninterruptible Power SupplyRDS(on) typ.7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessDl

0.2. Size:799K international rectifier
irfs4410pbf irfsl4410pbf.pdf

PD - 95707EIRFB4410PbFIRFS4410PbFIRFSL4410PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power SwitchingRDS(on) typ. 8.0ml Hard Switched and High Frequency CircuitsG max. 10mIDS 88ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

0.3. Size:799K infineon
irfb4410pbf irfs4410pbf irfsl4410pbf.pdf

0.4. Size:289K infineon
auirfs4410z auirfsl4410z.pdf

PD - 96405AAUTOMOTIVE GRADEAUIRFS4410ZAUIRFSL4410ZFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating TemperatureDVDSS100Vl Fast Switchingl Repetitive Avalanche Allowed up to Tjmax RDS(on) typ.7.2ml Lead-Free, RoHS Compliant max. 9.0mGl Automotive Qualified *ID 97ASDescriptionSpecifically desig

0.5. Size:330K infineon
irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf

0.6. Size:802K infineon
irfb4410 irfs4410 irfsl4410.pdf

PD - 96902CIRFB4410IRFS4410IRFSL4410ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS100Vl High Speed Power SwitchingRDS(on) typ.8.0ml Hard Switched and High Frequency CircuitsG max. 10mBenefitsID96Al Improved Gate, Avalanche and Dynamic dV/dtSRuggednessl Fully Characterized Capacita

0.7. Size:286K inchange semiconductor
irfsl4410.pdf

isc N-Channel MOSFET Transistor IRFSL4410FEATURESStatic drain-source on-resistance:RDS(on) 10mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

0.8. Size:261K inchange semiconductor
irfsl4410z.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL4410ZFEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

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