FDS4465F085 Todos los transistores

 

FDS4465F085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS4465F085

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 13.5 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 1497 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm

Encapsulados: SO-8

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FDS4465F085 datasheet

 7.1. Size:137K  fairchild semi
 fds4465.pdf pdf_icon

FDS4465F085

March 2003 FDS4465 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 13.5 A, 20 V. RDS(ON) = 8.5 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 10.5 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 14 m

 7.2. Size:400K  fairchild semi
 fds4465 f085.pdf pdf_icon

FDS4465F085

February 2010 tm FDS4465_F085 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 13.5 A, 20 V. RDS(ON) = 8.5 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 10.5 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(

 7.3. Size:264K  onsemi
 fds4465.pdf pdf_icon

FDS4465F085

FDS4465 P-Channel 1.8V Specified POWERTRENCH MOSFET Description This P-Channel 1.8 V specified MOSFET is a rugged gate version www.onsemi.com of ON Semiconductor s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8 V 8 V). VDSS RDS(on) MAX ID MAX Features -20 V 8.5 mW @ -4.5 V -13.5 A 13.5

 7.4. Size:811K  cn vbsemi
 fds4465-nl-9.pdf pdf_icon

FDS4465F085

FDS4465-NL&-9 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7

MOSTRAR MÁS

Otros transistores... FDS3890 , FDS3992 , STE339S , FDS4141 , FDS4141F085 , FDS4435BZ , FDS4435BZF085 , FDS4465 , RFP50N06 , FDS4470 , FDS4488 , STD12L01 , FDS4501H , STB458D , STB440S , FDS4559 , STB438S .

 

 

 

 

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