SGP100N042 Todos los transistores

 ..1. Size:605K  cn super semi
 sgb100n042 sgp100n042.pdf

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N042 Rev. 0.9 Jul. 2021 www.supersemi.com.cn SGB100N042/SGP100N042 100V N-Channel MOSFET Description Features VDS 100V The SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120A that is uniquely optimized to provide the most efficient hig

 6.1. Size:708K  cn super semi
 sgb100n025 sgp100n025 sgw100n025.pdf

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N025 Rev. 1.1 Jul. 2021 www.supersemi.com.cn SGB100N025/SGP100N025/SGW100N025 100V N-Channel MOSFET Description Features VDS 100V The SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 180A that is uniquely optimized to provide the most ef

 7.1. Size:878K  cn super semi
 sgt100n45t sgp100n45t.pdf

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N45T Rev. 1.0 Dec. 2016 www.supersemi.com.cn Jun, 2015 SG-FET SGT100N45T/SGP100N45T 100V N-Channel MOSFET Description Features The SG-MOSFET uses trench MOSFET technology that is VDS 100V ID (at Vgs=10V) 25A uniquely optimized to

 9.1. Size:615K  fairchild semi
 sgp10n60rufd.pdf

IGBT SGP10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100 C, VGE = 15V Transistors (IGBTs) provide low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUFD Low saturation voltage VCE(sat) = 2.2 V @ IC = 10A series is designed f

 9.2. Size:231K  samsung
 sgp10n60ruf.pdf

N-CHANNEL IGBT SGP10N60RUF FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V @ Ic=10A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VC

 9.3. Size:272K  samsung
 sgp10n60rufd.pdf

CO-PAK IGBT SGP10N60RUFD FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.1 V @ Ic=10A * High Input Impedance * CO-PAK, IGBT with FRD Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS

 9.4. Size:321K  infineon
 sgp10n60a sgw10n60a rev2.pdf

SGP10N60A SGW10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable b

 9.5. Size:319K  infineon
 sgp10n60a.pdf

SGP10N60A SGW10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable b

 9.6. Size:348K  infineon
 sgp10n60a sgw10n60a rev2 5g.pdf

SGP10N60A SGW10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable b