SSB65R090S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSB65R090S2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 220 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 107 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Paquete / Cubierta: TO263
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SSB65R090S2 Datasheet (PDF)
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Otros transistores... SSA50R060S , SSA65R190S , SSB20N60S , SSB60R075SFD2 , SSB60R099S2E , SSB60R099SFD , SSB60R105SFD2 , SSB60R140SFD , SI2302 , SSB65R190S , SSB65R190S2 , SSB65R360S2E , SSB65R600S2 , SSB80R160S2 , SSB80R160SFD , SSB80R180S2 , SSB80R240S2 .
History: HM4826 | NTD5806NT4G
History: HM4826 | NTD5806NT4G
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