SSB65R360S2E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSB65R360S2E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 86 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 12 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 15.5 nC
Tiempo de subida (tr): 7 nS
Conductancia de drenaje-sustrato (Cd): 33 pF
Resistencia entre drenaje y fuente RDS(on): 0.37 Ohm
Paquete / Cubierta: TO263
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SSB65R360S2E Datasheet (PDF)
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R190S2Rev. 1.7Aug. 2022www.supersemi.com.cnSSP65R190S2/SSB65R190S2/SSW65R190S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
