SSF60R190S2E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF60R190S2E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 36 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 31 nC
Tiempo de subida (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 60 pF
Resistencia entre drenaje y fuente RDS(on): 0.19 Ohm
Paquete / Cubierta: TO220F
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SSF60R190S2E Datasheet (PDF)
ssf60r190s2e ssp60r190s2e.pdf
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySS*60R190SFD2Rev. 1.1Aug. 2022www.supersemi.com.cnSSF60R190SFD2/SSP60R190SFD2600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Mult
ssf60r190sfd ssp60r190sfd ssw60r190sfd.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySS*60R190SFDRev. 1.6Aug. 2022www.supersemi.com.cnSSF60R190SFD/SSP60R190SFD/SSW60R190SFD600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryFeaturesDescription Multi-Epi process SJ-FETSJ-FET is new generation of
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