SSF60R260S2E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF60R260S2E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 30 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 14.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 21 nC
Tiempo de subida (tr): 7 nS
Conductancia de drenaje-sustrato (Cd): 35 pF
Resistencia entre drenaje y fuente RDS(on): 0.27 Ohm
Paquete / Cubierta: TO220F
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SSF60R260S2E Datasheet (PDF)
ssf60r260s2e ssp60r260s2e.pdf
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ssf60r260s2 ssp60r260s2 ssi60r260s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R260S2Rev. 1.0Jun. 2019www.supersemi.com.cnSSF60R260S2/SSP60R260S2/SSI60R260S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin
ssf60r260s2 ssp60r260s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R260S2Rev. 1.4Oct. 2022www.supersemi.com.cnSSF60R260S2/SSP60R260S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-Recovery SS*60R280SFDRev. 1.2Feb. 2023www.supersemi.com.cnSSF60R280SFD/SSP60R280SFD/SST60R280SFD600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryFeaturesDescription Multi-Epi process SJ-FETSJ-FET is new generation o
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