SSF65R140SFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF65R140SFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 36 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 43 nC
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 85 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
Paquete / Cubierta: TO220F
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SSF65R140SFD Datasheet (PDF)
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R190S2ERev. 1.0Oct. 2022www.supersemi.com.cnSSF65R190S2E/SSP65R190S2E650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an adva
Otros transistores... SSF60R260S2E , SSF60R280SFD , SSF60R360S2E , SSF65R065SFD3 , SSF65R080SFD3 , SSF65R090S2 , SSF65R099S2E , SSF65R130S2 , IRF3205 , SSF65R190S , SSF65R190S2E , SSF65R190S2R , SSF65R190S3 , SSF65R190SFD , SSF65R1K2S2E , SSF65R260S2E , SSF65R260S2R .
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