SSI65R190S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSI65R190S2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 150 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 36.5 nC
Tiempo de subida (tr): 18 nS
Conductancia de drenaje-sustrato (Cd): 68 pF
Resistencia entre drenaje y fuente RDS(on): 0.19 Ohm
Paquete / Cubierta: TO262
Búsqueda de reemplazo de MOSFET SSI65R190S2
SSI65R190S2 Datasheet (PDF)
ssi65r190s2.pdf
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ssb65r360s2e ssi65r360s2e.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R360S2ERev. 1.2Nov. 2022www.supersemi.com.cnSSB65R360S2E/SSI65R360S2E650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an adva
ssb65r360s2 ssi65r360s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R360S2Rev. 1.4Dec. 2023www.supersemi.com.cnSSB65R360S2/SSI65R360S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance
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