SSP70R190S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSP70R190S2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 35.5 nC
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 68 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: TO220
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Otros transistores... SSP65R190S3 , SSP65R190SFD , SSP65R1K2S2E , SSP65R260S2E , SSP65R260S2R , SSP65R360S2E , SSP65R600S2 , SSP65R600S3 , RU7088R , SSP70R300S2R , SSP70R380S2 , SSP70R600S2 , SSP80R160S2 , SSP80R240S2 , SSP80R240SFD , SSP80R360S2 , SSP80R380S2 .
History: IRLZ24S | HSBB4016 | NCEP055N10M | SSP60R280SFD | R6530KNZ | WST3407A | JFPC13N65C
History: IRLZ24S | HSBB4016 | NCEP055N10M | SSP60R280SFD | R6530KNZ | WST3407A | JFPC13N65C



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