SSP80R360S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSP80R360S2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 160 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 15 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 27 nC
Tiempo de subida (tr): 48 nS
Conductancia de drenaje-sustrato (Cd): 50 pF
Resistencia entre drenaje y fuente RDS(on): 0.38 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET SSP80R360S2
SSP80R360S2 Datasheet (PDF)
ssf80r360s2 ssp80r360s2.pdf
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ssf80r380s2 ssp80r380s2 sst80r380s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFET Gen-SS*80R380S2Rev. 1.2Mar. 2022www.supersemi.com.cnSSF80R380S2/SSP80R380S2/SST80R380S2800V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin
ssf80r380s ssp80r380s ssw80r380s ssa80r380s.pdf
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power MOSFET SS*80R380S Rev. 1.4 Aug. 2019 www.supersemi.com.cn September, 2013 SJ-FET SSF80R380S/SSP80R380S/SSW80R380S/SSA80R380S 800V N-Channel MOSFET Description Features SSMOS-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ
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