SST60R280S2E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SST60R280S2E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 106 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 14.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 21 nC
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 35 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Paquete / Cubierta: TO252
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SST60R280S2E Datasheet (PDF)
sst60r280s2e.pdf
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sst60r280s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SST60R280S2Rev. 1.4Sep. 2022www.supersemi.com.cnSST60R280S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge bal
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-Recovery SS*60R280SFDRev. 1.2Feb. 2023www.supersemi.com.cnSSF60R280SFD/SSP60R280SFD/SST60R280SFD600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryFeaturesDescription Multi-Epi process SJ-FETSJ-FET is new generation o
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R360S2ERev. 1.2Sep. 2022www.supersemi.com.cnSSF60R360S2E/SSP60R360S2E/SST60R360S2E600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis util
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
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