SST80R600S2 Todos los transistores

 

SST80R600S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SST80R600S2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 78 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 17.2 nC
   trⓘ - Tiempo de subida: 34 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.63 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

SST80R600S2 Datasheet (PDF)

 ..1. Size:891K  cn super semi
 ssf80r600s2 ssp80r600s2 sst80r600s2.pdf pdf_icon

SST80R600S2

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFET Gen-SS*80R600S2Rev. 1.1May. 2022www.supersemi.com.cnSSF80R600S2/SSP80R600S2/SST80R600S2800V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin

 8.1. Size:1181K  cn super semi
 ssf80r500s ssp80r500s ssb80r500s sst80r500s.pdf pdf_icon

SST80R600S2

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFETSS*80R500SRev. 2.1Jun. 2022www.supersemi.com.cnSeptember, 2013SJ-FETSSF80R500S/SSP80R500S/SSB80R500S/SST80R500S800V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET 850V @

 8.2. Size:1352K  cn super semi
 ssf80r1k3s ssp80r1k3s sst80r1k3s ssu80r1k3s.pdf pdf_icon

SST80R600S2

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFETSS*80R1K3SRev. 2.1Jun. 2022www.supersemi.com.cnSeptember, 2013SJ-FETSSF80R1K3S/SSP80R1K3S/SST80R1K3S/SSU80R1K3S800V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizi

 8.3. Size:993K  cn super semi
 ssf80r850s2 ssp80r850s2 sst80r850s2.pdf pdf_icon

SST80R600S2

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFET Gen-SS*80R850S2Rev. 1.2May. 2022www.supersemi.com.cnSSF80R850S2/SSP80R850S2/SST80R850S2800V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin

MOSTRAR MÁS

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History: IRFL110PBF

 

 
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