SSW65R043SFD2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSW65R043SFD2 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 330 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 64 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 230 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.043 Ohm
Encapsulados: TO247
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SSW65R043SFD2 datasheet
ssw65r043sfd2.pdf
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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen- SSW65R090S2 Rev. 1.2 May. 2022 www.supersemi.com.cn SSW65R090S2 650V N-Channel Super-Junction MOSFET Gen- Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing an advanced charge bal
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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen- With Fast-Recovery SS*65R065SFD3 Rev. 1.1 Aug. 2022 www.supersemi.com.cn SSF65R065SFD3/SSP65R065SFD3/SSW65R065SFD3 650V N-Channel Super-Junction MOSFET Gen- With Fast-Recovery Description Features SJ-FET is new generation of high voltage MOSFET family
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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen- With Fast-Recovery SS*65R075SFD2 Rev. 0.9 Dec. 2022 www.supersemi.com.cn SSP65R075SFD2/SSW65R075SFD2 650V N-Channel Super-Junction MOSFET Gen- With Fast-Recovery Description Features SJ-FET is new generation of high voltage MOSFET family that Mult
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Parámetros del MOSFET. Cómo se afectan entre sí.
History: 2N60G-T60-K | IRFH8318PBF | IRFB3806
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