SSW65R080SFD3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSW65R080SFD3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 220 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 38 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 68.5 nC
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 113 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Paquete / Cubierta: TO247
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SSW65R080SFD3 Datasheet (PDF)
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen- With Fast-RecoverySS*65R065SFD3Rev. 1.1Aug. 2022www.supersemi.com.cnSSF65R065SFD3/SSP65R065SFD3/SSW65R065SFD3650V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen- With Fast-RecoverySS*65R033SFD3Rev. 1.1Aug. 2022www.supersemi.com.cnSSW65R033SFD3650V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen- With Fast-RecoverySS*65R043SFD2Rev. 1.1Feb. 2023www.supersemi.com.cnSSW65R043SFD2650V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
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