SSW65R090S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSW65R090S2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 220 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 36 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 63.5 nC
Tiempo de subida (tr): 14 nS
Conductancia de drenaje-sustrato (Cd): 107 pF
Resistencia entre drenaje y fuente RDS(on): 0.09 Ohm
Paquete / Cubierta: TO247
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SSW65R090S2 Datasheet (PDF)
ssw65r090s2.pdf
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R099S2ERev. 1.1Aug. 2022www.supersemi.com.cnSSF65R099S2E/SSP65R099S2E/SSW65R099S2E650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis util
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen- With Fast-RecoverySS*65R099SFDRev. 1.3Aug. 2022www.supersemi.com.cnSSF65R099SFD/SSP65R099SFD/SSW65R099SFD650V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family tha
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