FDS5672 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDS5672
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 410 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de FDS5672 MOSFET
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FDS5672 datasheet
fds5672.pdf
July 2005 FDS5672 N-Channel PowerTrench MOSFET 60V, 12A, 10m Features General Description rDS(ON) = 10m , VGS = 10V, ID = 12A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(ON) = 14m , VGS = 6V, ID = 10A either synchronous or conventional switching PWM controllers. It has been optimized for low gate cha
fds5672.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds5670.pdf
August 1999 FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically 10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.017 @ VGS = 6 V. either synchronous or conventional switching PWM controllers. Low gate charge. These MOSFETs feature fas
fds5670.pdf
FDS5670 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.012 at VGS = 10 V 12.6 60 10.5 nC Optimized for Low Side Synchronous 0.015 at VGS = 4.5 V 11.6 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCF
Otros transistores... FDS4897AC , STB434S , FDS4897C , STB432S , FDS4935A , FDS4935BZ , FDS5351 , FDS5670 , IRF9640 , FDS6294 , STB416D , FDS6298 , STB31L01 , FDS6574A , FDS6670AS , STA6968 , FDS6673BZ .
History: SI1032R
History: SI1032R
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