SWB036R10E8S Todos los transistores

 ..1. Size:752K  samwin
 swp036r10e8s swb036r10e8s.pdf

SW036R10E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V High ruggedness ID 175A Low RDS(ON) (Typ 3.8m )@VGS=10V Low Gate Charge (Typ 85nC) RDS(ON) 3.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Motor Drivers 1 1. Gate 2.

 9.1. Size:725K  samwin
 swp031r06et swb031r06et.pdf

SW031R06ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-263 TO-220 BVDSS 60V High ruggedness ID 120A Low RDS(ON) (Typ 3.0m )@VGS=10V RDS(ON) 3.0m Low Gate Charge (Typ 148nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Electronic Ballast , Motor 3 3 Control , Synchronous Rectificat

 9.2. Size:646K  samwin
 swb035r08et.pdf

SW035R08ET N-channel Enhanced mode TO-263 MOSFET Features TO-263 BVDSS 80V High ruggedness ID 120A Low RDS(ON) (Typ 3.3m )@VGS=10V RDS(ON) 3.3m Low Gate Charge (Typ 185nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, Inverter, 2 3 Li Battery Protect Board 1 1. Gate 2. Drain 3. Sou

 9.3. Size:728K  samwin
 swb038r10es swp038r10es.pdf

SW038R10ES N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 100V High ruggedness ID 120A Low RDS(ON) (Typ 3.6m )@VGS=10V RDS(ON) 3.6m Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 2 Application Synchronous Rectification, 2 3 3 Inverter , Li Battery Protect Bo

 9.4. Size:978K  samwin
 swp030r04vt swb030r04vt.pdf

SW030R04VT N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 BVDSS 40V TO-263 High ruggedness ID 130A Low RDS(ON) (Typ 3.7m )@VGS=4.5V RDS(ON) 3.7m @VGS=4.5V (Typ 2.8m )@VGS=10V Low Gate Charge (Typ 120nC) 2.8m @VGS=10V Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 2 3 3 Application Power Supply,LED Boost 1. Gate 2.

 9.5. Size:709K  samwin
 sw035r08et swb035r08et.pdf

SW035R08ET N-channel Enhanced mode TO-263 MOSFET Features TO-263 BVDSS 80V High ruggedness ID 120A Low RDS(ON) (Typ 3.3m )@VGS=10V RDS(ON) 3.3m Low Gate Charge (Typ 185nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, Inverter, 2 3 Li Battery Protect Board 1 1. Gate 2. Drain 3. Sou

 9.6. Size:905K  samwin
 sw038r10es swb038r10es swp038r10es swt038r10es.pdf

SW038R10ES N-channel Enhanced mode TO-263/TO-220/TO-247 MOSFET Features TO-263 TO-220 TO-247 BVDSS 100V High ruggedness ID 120A Low RDS(ON) (Typ 3.6m )@VGS=10V RDS(ON) 3.6m Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 2 Application Synchronous Rectification, 2 2 3 3 3 Inverter ,