SWB046R68E8T Todos los transistores

 

SWB046R68E8T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SWB046R68E8T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 195.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 68 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 145 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 75 nS

Cossⓘ - Capacitancia de salida: 543 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0054 Ohm

Encapsulados: TO263

 Búsqueda de reemplazo de SWB046R68E8T MOSFET

- Selecciónⓘ de transistores por parámetros

 

SWB046R68E8T datasheet

 ..1. Size:800K  samwin
 swp046r68e8t swb046r68e8t.pdf pdf_icon

SWB046R68E8T

SW046R68E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness Low RDS(ON) (Typ 4.6m )@VGS=10V ID 145A Low Gate Charge (Typ 145nC) RDS(ON) 4.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 1 2 3 Li Battery Protect Board, Inverter 3 1 1. Gate 2.Drain

 7.1. Size:737K  samwin
 swp046r08e8t swb046r08e8t.pdf pdf_icon

SWB046R68E8T

SW046R08E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness ID 150A Low RDS(ON) (Typ 4.8m )@VGS=10V RDS(ON) 4.8m Low Gate Charge (Typ 183nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3

 7.2. Size:741K  samwin
 swp046r08e9t swb046r08e9t.pdf pdf_icon

SWB046R68E8T

SW046R08E9T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness Low RDS(ON) (Typ 4.5m )@VGS=10V ID 160A Low Gate Charge (Typ 182nC) RDS(ON) 4.5m Improved dv/dt Capability 100% Avalanche Tested 2 Application Synchronous Rectification, 1 1 2 2 Li Battery Protect Board, Inverter 3 3 1 1. Gate 2.Drain 3.

 9.1. Size:729K  samwin
 swp042r10es swb042r10es.pdf pdf_icon

SWB046R68E8T

SW042R10ES N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V ID 120A High ruggedness Low RDS(ON) (Typ 4.4m )@VGS=10V RDS(ON) 4.4m Low Gate Charge (Typ 106nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 1 2 3 Application Synchronous Rectification, 3 Li Battery Protect Board, In

MOSTRAR MÁS

Otros transistores... SWB015R03VLT , SWB020R03VLT , SWB030R04VT , SWB031R06ET , SWB036R10E8S , SWB042R10ES , SWB046R08E8T , SWB046R08E9T , AO3400A , SWB050R95E8S , SWB051R08ES , SWB055R68E7T , SWB056R68E7T , SWB058R06E7T , SWB058R65E7T , SWB060R65E7T , SWB060R68E7T .

History: BS107PSTOA | SSW90R240S2 | BRI5N65 | SWD026R03VT | 4N65G-TF3-T | HCFL60R350 | AP01L60H-HF

 

 

 

 

↑ Back to Top
.