SWB072R06ET MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SWB072R06ET
Código: SW072R06ET
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 145 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 84 nC
trⓘ - Tiempo de subida: 52 nS
Cossⓘ - Capacitancia de salida: 362 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET SWB072R06ET
SWB072R06ET Datasheet (PDF)
swb072r06et swp072r06et.pdf
SW072R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 75A Low RDS(ON) (Typ 6.8m)@VGS=10V Low Gate Charge (Typ 84nC) RDS(ON) : 6.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter
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SW072R08ETN-channel Enhanced mode TO-263/TO-220 MOSFETFeaturesTO-263 TO-220 BVDSS : 80V High ruggednessID : 100A Low RDS(ON) (Typ 6.6m)@VGS=10VRDS(ON) : 6.6m Low Gate Charge (Typ 60nC) Improved dv/dt Capability 100% Avalanche Tested 21 1 Application:Synchronous Rectification, 2 23 3Inverter, Li Battery Protect Board11. Gate 2. Drain 3. So
swp076r68e7t swb076r68e7t.pdf
SW076R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 85A Low RDS(ON) (Typ 7.6m)@VGS=10V Low Gate Charge (Typ 70nC)RDS(ON) : 7.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S
swb075r06et swp075r06et.pdf
SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter
swb078r08et swp078r08et.pdf
SW078R08ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features BVDSS :80V TO-263 TO-220 High ruggedness ID :60A Low RDS(ON) (Typ 7.8m)@VGS=10V RDS(ON) : 7.8m Low Gate Charge (Typ 79nC) Improved dv/dt Capability 1 2 100% Avalanche Tested 1 2 3 2 Application:Telecom, Computer,Inverter 3 1 1. Gate 2. Drain 3. Source 3 Ge
swp075r08e7t swb075r08e7t.pdf
SW075R08E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggedness Low RDS(ON) (Typ 8m)@VGS=10V ID : 90A Low Gate Charge (Typ 95nC)RDS(ON) : 8m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.Source
sw075r06et swb075r06et swp075r06et.pdf
SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
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