FDS6298 Todos los transistores

 ..1. Size:353K  fairchild semi
 fds6298.pdf

April 2007 FDS6298 tm 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 12 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been

 ..2. Size:281K  onsemi
 fds6298.pdf

FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET Features General Description 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V This N-Channel MOSFET has been designed RDS(ON) = 12 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC Low gate charge (10nC @ VGS=5V) converters using either synchronous or conventional switching PWM contro

 8.1. Size:598K  fairchild semi
 fds6299s.pdf

November 2007 tm FDS6299S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6299S is designed to replace a single SO-8 21 A, 30 V. RDS(ON) = 3.9 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) = 5.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

 8.2. Size:367K  fairchild semi
 fds6294.pdf

February 2007 tm FDS6294 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.4 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers.

 8.3. Size:140K  onsemi
 fds6294.pdf

November 2003 FDS6294 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.4 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for