FDS6298 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS6298
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: SO-8

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FDS6298 Datasheet (PDF)

..1. Size:353K fairchild semi
fds6298.pdf

April 2007FDS6298 tm30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 12 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been

..2. Size:281K onsemi
fds6298.pdf

FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET Features General Description 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V This N-Channel MOSFET has been designed RDS(ON) = 12 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC Low gate charge (10nC @ VGS=5V) converters using either synchronous or conventional switching PWM contro

8.1. Size:598K fairchild semi
fds6299s.pdf

November 2007tmFDS6299S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6299S is designed to replace a single SO-8 21 A, 30 V. RDS(ON) = 3.9 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 5.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

8.2. Size:367K fairchild semi
fds6294.pdf

February 2007tmFDS6294 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.4 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers.

8.3. Size:140K onsemi
fds6294.pdf

November 2003FDS629430V N-Channel Fast Switching PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 14.4 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for

Otros transistores... STB432S , FDS4935A , FDS4935BZ , FDS5351 , FDS5670 , FDS5672 , FDS6294 , STB416D , IPSA70R360P7S , STB31L01 , FDS6574A , FDS6670AS , STA6968 , FDS6673BZ , FDS6673BZF085 , FDS6675BZ , FDS6676AS .

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