SWD062R08E8T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SWD062R08E8T
Código: SW062R08E8T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 142 W
Voltaje máximo drenador - fuente |Vds|: 80 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 110 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 141 nC
Tiempo de subida (tr): 71 nS
Conductancia de drenaje-sustrato (Cd): 427 pF
Resistencia entre drenaje y fuente RDS(on): 0.0072 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET SWD062R08E8T
SWD062R08E8T Datasheet (PDF)
swd062r08e8t.pdf
SW062R08E8TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 80V High ruggednessID : 110A Low RDS(ON) (Typ 6.0m)@VGS=10VRDS(ON) : 6.0m Low Gate Charge (Typ 141nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Des
swd062r68e7t.pdf
SW062R68E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 100A Low RDS(ON) (Typ 6.5m)@VGS=10VRDS(ON) : 6.5m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Des
swd065r03vlt.pdf
SW065R03VLTN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 30V High ruggednessID : 70A Low RDS(ON) (Typ 6.6m)@VGS=10V Low Gate Charge (Typ 33nC)RDS(ON) : 6.6m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Motor Drives11. Gate 2.Drain 3.Source3Genera
swd068r08e8t.pdf
SW068R08E8TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 80V High ruggednessID : 100A Low RDS(ON) (Typ 6.7m)@VGS=10VRDS(ON) :6.7m Low Gate Charge (Typ 128nC) Improved dv/dt Capability 2 100% Avalanche Tested 12 Application:Synchronous Rectification, 31Li Battery Protect Board, Motor Drivers1. Gate 2.Drain 3.Source3Genera
swd065r68e7t.pdf
SW065R68E7T N-channel Enhanced mode TO-252 MOSFET TO-252 Features BVDSS : 68V High ruggedness ID : 90A Low RDS(ON) (Typ 6.3m)@VGS=10V RDS(ON) : 6.3m Low Gate Charge (Typ 75nC) Improved dv/dt Capability 1 2 2 100% Avalanche Tested 3 Application:Synchronous Rectification, 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Sourc
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swha069r10vs swi069r10vs swd069r10vs swp069r10vs swu069r10vs.pdf
SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9.0m)@VGS=4.5V ID : 70A 1 8 Low RDS(ON) (Typ 7.1m)@VGS=10V 2 7 6 3 RDS(ON) : 9.0m@VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m@VGS=10V
swd068r68e7t.pdf
SW068R68E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 90A Low RDS(ON) (Typ 7.1m)@VGS=10VRDS(ON) : 7.1m Low Gate Charge (Typ 87nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Descr
swha069r10vs swi069r10vs swd069r10vs swp069r10vs.pdf
SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET Features DFN5*6 TO-251 TO-252 TO-220 BVDSS : 100V High ruggedness ID : 70A Low RDS(ON) (Typ 7.1m)@VGS=10V RDS(ON) : 7.1m@VGS=10V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 9.0m@VGS=4.5V 1 100% Avalanche Tested G(4) 1 1 D(5,6,7,8) 2 2 2 3 3 3 A
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