FDS6574A Todos los transistores

 ..1. Size:392K  fairchild semi
 fds6574a.pdf

May 2008 tmM FDS6574A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 16 A, 20 V. RDS(ON) = 6 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 7 m @ VGS = 2.5 V converters using either synchronous or conventional RDS(ON) = 9 m @ VGS = 1.8 V switching PWM controllers. It has been optimi

 ..2. Size:448K  onsemi
 fds6574a.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:71K  fairchild semi
 fds6572a.pdf

September 2001 FDS6572A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 16 A, 20 V. RDS(ON) = 6 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate c

 8.2. Size:67K  fairchild semi
 fds6575.pdf

September 2001 FDS6575 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P 2.5V specified MOSFET is a rugged -Channel 10 A, 20 V. R = 13 m @ V = 4.5 V DS(ON) GS gate version of Fairchild Semiconductor s advanced R = 17 m @ V = 2.5 V DS(ON) GS PowerTrench process. It has been optimized for power management applications wi

 8.3. Size:69K  fairchild semi
 fds6570a.pdf

March 2000 FDS6570A Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced 15 A, 20 V. RDS(on) = 0.0075 @ VGS = 4.5 V using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored RDS(on) = 0.010 @ VGS = 2.5 V. to minimize on-state resistance and

 8.4. Size:446K  fairchild semi
 fds6576.pdf

December 2006 tm FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged 11 A, 20 V. RDS(ON) = 0.014 @ VGS = 4.5 V gate version of Fairchild Semiconductor's advanced RDS(ON) = 0.020 @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications with a

 8.5. Size:205K  onsemi
 fds6570a.pdf

FDS6570A Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced 15 A, 20 V. RDS(on) = 0.0075 @ VGS = 4.5 V using ON Semiconductor's advanced PowerTrench process that has been especially tailored RDS(on) = 0.010 @ VGS = 2.5 V. to minimize on-state resistance and yet maintain sup

 8.6. Size:253K  onsemi
 fds6576.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.7. Size:1502K  cn vbsemi
 fds6575.pdf

FDS6575 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical E