SWD085R68E7T Todos los transistores

 

SWD085R68E7T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SWD085R68E7T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 92.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 68 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 163 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de SWD085R68E7T MOSFET

- Selecciónⓘ de transistores por parámetros

 

SWD085R68E7T datasheet

 ..1. Size:782K  samwin
 swd085r68e7t.pdf pdf_icon

SWD085R68E7T

SW085R68E7T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 68V High ruggedness ID 70A Low RDS(ON) (Typ 10.2m )@VGS=10V RDS(ON) 10.2m Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Des

 9.1. Size:750K  samwin
 swd088r08e8t.pdf pdf_icon

SWD085R68E7T

SW088R08E8T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 80V High ruggedness ID 80A Low RDS(ON) (Typ 9.7m )@VGS=10V RDS(ON) 9.7m Low Gate Charge (Typ 86nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Descr

 9.2. Size:681K  samwin
 sw088r06vt swk088r06vt swi088r06vt swd088r06vt swha088r06vt.pdf pdf_icon

SWD085R68E7T

SW088R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 SOP-8 BVDSS 60V High ruggedness Low RDS(ON) (Typ 11m )@VGS=4.5V ID 40A 5 6 Low RDS(ON) (Typ 9.2m )@VGS=10V 7 8 RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 48nC) 4 3 Improved dv/dt Capability 2 9.2m @VGS=10V 1 100% A

 9.3. Size:1012K  samwin
 swi088r06vt swd088r06vt swha088r06vt.pdf pdf_icon

SWD085R68E7T

SW088R06VT N-channel Enhanced mode TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 BVDSS 60V High ruggedness Low RDS(ON) (Typ 11m )@VGS=4.5V ID 40A 1 8 Low RDS(ON) (Typ 9.2m )@VGS=10V 2 7 RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 48nC) 6 3 5 4 Improved dv/dt Capability 9.2m @VGS=10V 100% Avalanche Tested 1 1 2 2 Applicati

MOSTRAR MÁS

Otros transistores... SWD065R03VLT , SWD065R68E7T , SWD068R08E8T , SWD068R68E7T , SWD070R08E7T , SWD075R06ET , SWD076R68E7T , SWD078R08E8T , AON7408 , SWD086R68E7T , SWD088R08E8T , SWD106R95VS , SWD10N50K , SWD10N65K , SWD10N65K2 , SWD10N80K2 , SWD110R03VT .

History: BS107ARL1G | 4N65G-TA3-T | SPP80N06S2L-H5 | SML20B56 | SWD110R03VT | AP0103GP-HF | SWD088R06VT

 

 

 

 

↑ Back to Top
.