NCE60R360F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60R360F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32.7 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 87 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
Encapsulados: TO220F
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NCE60R360F datasheet
nce60r360d nce60r360 nce60r360f.pdf
NCE60R360D,NCE60R360,NCE60R360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industry s ID 11 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria
nce60td65bt.pdf
PbFreeProduct NCE60TD65BT 650V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce60p16aq.pdf
http //www.ncepower.com NCE60P16AQ NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -60V,I = -16A DS D or power management. R
nce60nf730i.pdf
NCE60NF730I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust
nce6030k.pdf
Pb Free Product http //www.ncepower.com NCE6030K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6030K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =30A RDS(ON)
nce603s.pdf
Pb Free Product http //www.ncepower.com NCE603S N and P-Channel Enhancement Mode Power MOSFET Description The NCE603S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS = 6
nce60n390f.pdf
NCE60N390F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria
nce6075k.pdf
Pb Free Product http //www.ncepower.com NCE6075K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6075K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)
nce6020ak.pdf
Pb Free Product http //www.ncepower.com NCE6020AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)
nce60nf200i.pdf
NCE60NF200I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust
nce60n640f.pdf
NCE60N640F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indus
nce60np4035k.pdf
NCE60NP4035K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP4035K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =40A DS D R
nce6008as.pdf
Pb Free Product http //www.ncepower.com NCE6008AS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6008AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =8A Schematic diagram RDS(ON)
nce60np2012k.pdf
NCE60NP2012K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP2012K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features N channel Schematic diagram V =60V,I =20A DS D R
nce60n700d.pdf
NCE60N700D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr
nce6080ek.pdf
NCE6080EK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080EK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R
nce60p05n.pdf
http //www.ncepower.com NCE60P05N NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-5A RDS(ON)
nce60nf040t.pdf
NCE60NF040T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 35 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 61 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 87 nC SMPS requirements for PFC,
nce6075.pdf
Pb Free Product http //www.ncepower.com NCE6075 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)
nce60p45ak.pdf
NCE60P45AK http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P45AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-45A RDS(ON)
nce60np1515k.pdf
NCE60NP1515K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP1515K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =15A DS D R
nce60n390i.pdf
NCE60N390I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria
nce6003m.pdf
Pb Free Product http //www.ncepower.com NCE6003M NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S General Feature Schematic diagram
nce60p06s.pdf
http //www.ncepower.com NCE60P06S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-6A RDS(ON)
nce60nf260d.pdf
NCE60NF260D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 14 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indus
nce60nf080f.pdf
NCE60NF080F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 70 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 41 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 53 nC power conversion, and industria
nce60n670f.pdf
NCE60N670F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 620 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.4 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr
nce60p45k.pdf
NCE60P45K http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P45K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-45A RDS(ON)
nce60p40f.pdf
NCE60P40F http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P40F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-40A RDS(ON)
nce60p82ad.pdf
NCE60P82AD http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P82AD uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-60V,I =-82A DS D R
nce60td60bp.pdf
Pb Free Product NCE60TD60BP 600V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce60p09s.pdf
NCE60P09S http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON)
nce6003.pdf
Pb Free Product http //www.ncepower.com NCE6003 NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE6003 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S Schematic Diagram General Features
nce60t2k2i.pdf
NCE60T2K2I NCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce60n640k.pdf
NCE60N640K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indus
nce6012cs.pdf
Pb Free Product http //www.ncepower.com NCE6012CS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6012CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =12A Schematic diagram RDS(ON)
nce6080d.pdf
http //www.ncepower.com NCE6080D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A Schematic diagram RDS(ON)
nce60p50g.pdf
http //www.ncepower.com NCE60P50G NCE P-Channel Enhancement Mode Power MOSFET Description General Features The NCE60P50G uses advanced trench technology and V =-60V,I =-50A DS D design to provide excellent R with low gate charge .This DS(ON) R =23m (typical) @ V =-10V DS(ON) GS device is well suited for high current load applications. High density cell design for ultra lo
nce60n1k0d.pdf
NCE60N1K0D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu
nce6045xg.pdf
http //www.ncepower.com NCE6045XG NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6045XG uses advanced trench technology and General Features design to provide excellent R with low gate charge. It can V =60V,I =45A DS(ON) DS D be used in a wide variety of applications. R =7.4m (typical) @ V =10V DS(ON) GS R =11.4m (typical) @ V =4.5V Application DS(ON) GS
nce60nf160v.pdf
NCE60NF160V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 145 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industri
nce60nf200k.pdf
NCE60NF200K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust
nce60h10k.pdf
http //www.ncepower.com NCE60H10K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10K uses advanced trench technology and design to provide excellent R with low gate charge. This DS(ON) device is suitable for use in PWM, load switching and general purpose applications. General Features V =60V,I =100A Schematic diagram DS D R
nce60n390k.pdf
NCE60N390K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria
nce6080k.pdf
Pb Free Product NCE6080K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)
nce60nf730k.pdf
NCE60NF730K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust
nce60td60bt.pdf
Pb Free Product NCE60TD60BT 600V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce60nd03n.pdf
http //www.ncepower.com NCE60ND03N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND03N uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 2.5V. This device is suitable for use as Schematic diagram a Battery protection or in other switching application. General Features V =60V,I =3A DS D R
nce60h30t.pdf
http //www.ncepower.com NCE60H30T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H30T uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =300A DS D R
nce60nf200f.pdf
NCE60NF200F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust
nce6004.pdf
http //www.ncepower.com NCE6004 NCE N-Channel Enhancement Mode Power MOSFET D Description G The NCE6004 uses advanced trench technology to provide excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S Schematic Diagram General Features V =60V,I =4A DS D R
nce60n1k0r.pdf
NCE60N1K0R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu
nce6058k.pdf
http //www.ncepower.com NCE6058K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6058K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =58A DS D R
nce6065ag.pdf
NCE6065AG http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6065AG uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =65A DS D R
nce60nf160k.pdf
NCE60NF160K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 145 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industri
nce60p20k.pdf
http //www.ncepower.com NCE60P20K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-20A RDS(ON)
nce60n700f.pdf
NCE60N700F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr
nce60p70d.pdf
NCE60P70D http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P70D uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =-60V,I =-70A DS D R
nce60nf730r.pdf
NCE60NF730R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust
nce60nf080.pdf
NCE60NF080 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 70 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 41 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 53 nC power conversion, and industrial
nce60p18aq.pdf
NCE60P18AQ http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET General Features Description V = -60V,I = -18A DS D The NCE60P18AQ uses advanced trench technology to provide R
nce6065g.pdf
NCE6065G http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6065G uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =65A DS D R
nce60n640i.pdf
NCE60N640I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indus
nce60np09s.pdf
NCE60NP09S http //www.ncepower.com NCE 60V Complementary MOSFET Description The NCE60NP09S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =9A DS D R
nce60nf730d.pdf
NCE60NF730D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust
nce6050ka.pdf
Pb Free Product http //www.ncepower.com NCE6050KA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)
nce6058.pdf
Pb Free Product http //www.ncepower.com NCE6058 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6058 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =58A RDS(ON)
nce60h15a.pdf
http //www.ncepower.com NCE60H15A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)
nce609.pdf
Pb Free Product http //www.ncepower.com NCE609 N and P-Channel Enhancement Mode Power MOSFET Description The NCE609 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel Schematic diagram VDS =40V,ID
nce60n390.pdf
NCE60N390 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industrial
nce60nf200d.pdf
NCE60NF200D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust
nce60p03r.pdf
http //www.ncepower.com NCE60P03R NCE P-Channel Enhancement Mode Power MOSFET Description General Features The NCE60P03R uses advanced trench technology and design V =-60V,I =-3A DS D to provide excellent R with low gate charge .This device is DS(ON) R
nce60p28ak.pdf
NCE60P28AK http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P28AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-28A RDS(ON)
nce60nd18g.pdf
Pb Free Product http //www.ncepower.com NCE60ND18G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND18G uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =18A DS D Schematic diagram R
nce60p10k.pdf
Pb Free Product http //www.ncepower.com NCE60P10K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-10A RDS(ON)
nce60p65k.pdf
http //www.ncepower.com NCE60P65K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P65K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-60V,I =-65A DS D R
nce6020a.pdf
Pb Free Product http //www.ncepower.com NCE6020A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020A uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =20A Schematic diagram DS D R
nce60td60bp nce60td60bt.pdf
PbFreeProduct NCE60TD60BP,NCE60TD60BT 600V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce6020aq.pdf
NCE6020AQ http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description General Features he NCE6020AQ uses advanced trench technology and design to V = 60V,I = 20A DS D provide excellent R with low gate charge. It can be used in a R
nce60nf080t.pdf
NCE60NF080T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 70 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 41 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 53 nC power conversion, and industria
nce6005as.pdf
Pb Free Product http //www.ncepower.com NCE6005AS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS=60V,ID=5A RDS(ON)
nce60nf260f.pdf
NCE60NF260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 14 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indus
nce60nf200.pdf
NCE60NF200 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and industr
nce6012as.pdf
Pb Free Product http //www.ncepower.com NCE6012AS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6012AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =12A RDS(ON)
nce60h15ad.pdf
http //www.ncepower.com NCE60H15AD NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)
nce60h10.pdf
http //www.ncepower.com NCE60H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10 uses advanced trench technology and design to provide excellent R with low gate charge. This device is DS(ON) suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =60V,I =100A DS D R
nce60nf260i.pdf
NCE60NF260I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 14 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indus
nce60n2k1f.pdf
NCE60N2K1F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P
nce60nf420d.pdf
NCE60NF420D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 380 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.7 nC power conversion, and ind
nce60nd45ag.pdf
NCE60ND45AG http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND45AG uses advanced trench technology and General Features design to provide excellent R with low gate charge. It can V =60V,I =45A DS(ON) DS D be used in a wide variety of applications. R =9.4m (typical) @ V =10V DS(ON) GS R =13.4m (typical) @ V =4.5V Application DS(ON) GS
nce6050a.pdf
Pb Free Product http //www.ncepower.com NCE6050A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)
nce60nf031t.pdf
NCE60NF031T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 23 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 81 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 135 nC SMPS requirements for P
nce60nd45xg.pdf
NCE60ND45XG http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET General Features Description V = 60V,I =45A DS D The NCE60ND45XG uses advanced trench technology and R
nce60nf260k.pdf
NCE60NF260K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 14 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indus
nce60n700r.pdf
NCE60N700R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr
nce60p25.pdf
Pb Free Product http //www.ncepower.com NCE60P25 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)
nce60nd08s.pdf
http //www.ncepower.com NCE60ND08S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =8A DS D R
nce6080.pdf
http //www.ncepower.com NCE6080 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A Schematic diagram DS D R
nce60t2k2k.pdf
NCE60T2K2I NCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce60p04sn.pdf
NCE60P04SN http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04SN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-4A RDS(ON)
nce60h10d.pdf
http //www.ncepower.com NCE60H10D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10D uses advanced trench technology and design to provide excellent R with low gate charge. This DS(ON) device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =60V,I =100A DS D R
nce60p09as.pdf
NCE60P09AS http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON)
nce6007s.pdf
Pb Free Product http //www.ncepower.com NCE6007S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =7A Schematic diagram RDS(ON)
nce60p55k.pdf
http //www.ncepower.com NCE60P55K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P55K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-55A RDS(ON)
nce60nf260.pdf
NCE60NF260 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 14 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indust
nce6005an.pdf
NCE6005AN http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AN uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =5A DS D R
nce60td65bt.pdf
Pb Free Product NCE60TD65BT 650V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce60n370k.pdf
NCE60N370K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 335 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria
nce6080ak.pdf
Pb Free Product NCE6080AK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R =6m (typical) @ V =10V Schematic diagram DS(ON) GS R =7m (typical) @ V =
nce60p05r.pdf
http //www.ncepower.com NCE60P05R NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-5A Schematic diagram RDS(ON)
nce60np2016g.pdf
Pb Free Product http //www.ncepower.com NCE60NP2016G NCE N&P-Channel complementary Power MOSFET Description The NCE60NP2016G uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =20A DS D R
nce6045g.pdf
Pb Free Product http //www.ncepower.com NCE6045G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6045G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =45A RDS(ON)
nce60nd45g.pdf
NCE60ND45G http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND45G uses advanced trench technology and General Features design to provide excellent RDS(ON) with low gate charge. It VDS = 60V,ID =45A can be used in a wide variety of applications. RDS(ON)
nce60nf420k.pdf
NCE60NF420K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 380 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.7 nC power conversion, and ind
nce60nf019t.pdf
NCE60NF019T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 17 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 107 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 184 nC SMPS requirements for PF
nce60t2k2i nce60t2k2k.pdf
NCE60T2K2I NCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce6080ed.pdf
http //www.ncepower.com NCE6080ED NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080ED uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A Schematic diagram DS D R
nce60n700i.pdf
NCE60N700I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr
nce60nf110.pdf
NCE60NF110 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 95 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 29 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, AC/
nce6003xm.pdf
http //www.ncepower.com NCE6003XM NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE6003XM uses advanced trench technology to provide excellent R , low gate charge. This device is suitable for DS(ON) G use as a Battery protection or in other switching application. S General Features Schematic Diagram V =60V,I =3A DS D R
nce60n1k0i.pdf
NCE60N1K0I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu
nce60nf420i.pdf
NCE60NF420I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 380 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.7 nC power conversion, and ind
nce60n2k1r.pdf
NCE60N2K1R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P
nce6080a.pdf
Pb Free Product NCE6080A http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)=6.5m (typical) @ VGS=10V Schematic diagram RDS(ON)=7.5m (typica
nce6080at.pdf
Pb Free Product NCE6080AT http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AT uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R =5.5m (typical) @ V =10V DS(ON) GS R =6.5m (typical) @ V =4.5V DS(ON) G
nce60n2k1d.pdf
NCE60N2K1D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P
nce60n2k1k.pdf
NCE60N2K1K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P
nce60n390d.pdf
NCE60N390D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria
nce60nf110f.pdf
NCE60NF110F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 95 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 29 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, AC
nce60nf200t.pdf
NCE60NF200T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust
nce60h15at.pdf
http //www.ncepower.com NCE60H15AT NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AT uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =150A DS D R
nce60n1k0k.pdf
NCE60N1K0K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu
nce60p70g.pdf
http //www.ncepower.com NCE60P70G NCE P-Channel Enhancement Mode Power MOSFET Description General Features The NCE60P70G uses advanced trench technology and V =-60V,I =-70A DS D design to provide excellent R with low gate charge .This R =11m (typical) @ V =-10V DS(ON) DS(ON) GS device is well suited for high current load applications. R =13m (typical) @ V =-4.5V DS(ON) GS
nce60p12as.pdf
NCE60P12AS http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-12A RDS(ON)
nce60p14k.pdf
NCE60P14K http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P14K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram V =-60V,I =-14A DS D R
nce60nf420f.pdf
NCE60NF420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 380 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.7 nC power conversion, and ind
nce60nf420.pdf
NCE60NF420 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 380 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.7 nC power conversion, and indu
nce6005ar.pdf
Pb Free Product http //www.ncepower.com NCE6005AR NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=60V,ID=5A RDS(ON)
nce60p07as.pdf
NCE60P07AS http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-7A Schematic diagram RDS(ON)
nce60p09k.pdf
http //www.ncepower.com NCE60P09K NCE P-Channel Enhancement Mode Power MOSFET General Features Description V =-60V,I =-9A DS D The NCE60P09K uses advanced trench technology and design R
nce6009xs.pdf
http //www.ncepower.com NCE6009XS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6009XS uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =9A DS D Schematic diagram R
nce60n2k1i.pdf
NCE60N2K1I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P
nce60n640d.pdf
NCE60N640D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indus
nce6003xy.pdf
http //www.ncepower.com NCE6003XY NCE N-Channel Enhancement Mode Power MOSFET D Description G The NCE6003XY uses advanced trench technology to provide excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S Schematic Diagram General Features V =60V,I =3A DS D R
nce60p50.pdf
Pb Free Product http //www.ncepower.com NCE60P50 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)
nce6042ag.pdf
NCE6042AG http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6042AG uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =42A Schematic diagram DS D R
nce6080ai.pdf
http //www.ncepower.com NCE6080AI NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AI uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R =5.5m (typical) @ V =10V Schematic diagram DS(ON) GS R =6.5m (typical) @ V =4.5V DS(ON) G
nce60n700k.pdf
NCE60N700K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr
nce60nf055.pdf
NCE60NF055 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 50 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 51 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 58 nC power conversion, and industrial
nce60nf080d.pdf
NCE60NF080D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 70 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 41 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 53 nC power conversion, and industria
nce60h10f.pdf
Pb Free Product http //www.ncepower.com NCE60H10F NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)
nce603583.pdf
NCE603583 http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE603583 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features N channel Schematic diagram V =60V,I =40A DS D R
nce60td120ut.pdf
PbFreeProduct NCE60TD120UT 1200V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw
nce60nf055t.pdf
NCE60NF055T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 50 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 51 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 58 nC power conversion, and industria
nce6009as.pdf
Pb Free Product http //www.ncepower.com NCE6009AS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6009AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)
nce60h18.pdf
http //www.ncepower.com NCE60H18 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H18 uses advanced trench technology and design to provide excellent R with low gate charge. This device is DS(ON) suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =60V,I =180A DS D R
nce60p82af.pdf
NCE60P82AF http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET General Features V =-60V,I =-41A Description DS D The NCE60P82AF uses advanced trench technology and design R
nce60nf055d.pdf
NCE60NF055D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 50 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 51 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 58 nC power conversion, and industria
nce60nd03s.pdf
http //www.ncepower.com NCE60ND03S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND03S uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 2.5V. This device is suitable for use as Schematic diagram a Battery protection or in other switching application. General Features V =60V,I =3A DS D R
nce6025q.pdf
NCE6025Q http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6025Q uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =25A DS D R
nce6050ia.pdf
Pb Free Product http //www.ncepower.com NCE6050IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)
nce6003y.pdf
Pb Free Product http //www.ncepower.com NCE6003Y NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE6003Y uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S Schematic Diagram General Features
nce60h15t.pdf
http //www.ncepower.com NCE60H15T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15T uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =150A DS D R
nce60n1k0f.pdf
NCE60N1K0F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu
nce6003x.pdf
http //www.ncepower.com NCE6003X NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE6003X uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S Schematic Diagram General Features V =60V,I =3A DS D R
nce6010j.pdf
Pb Free Product http //www.ncepower.com NCE6010J NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6010J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =10A RDS(ON)
nce60h28ll.pdf
http //www.ncepower.com NCE60H28LL NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE60H28LL uses advanced trench technology and V =60V ,I =280A DS D design to provide excellent R with low gate charge. It R
nce60p25k.pdf
Pb Free Product http //www.ncepower.com NCE60P25K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)
nce60pd05s.pdf
NCE60PD05S http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE60PD05S uses advanced trench technology and G1 G2 design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S1 S2 Schematic diagram General Features VDS =-60V,ID =-5A RDS(ON)
nce60n640.pdf
NCE60N640 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indust
nce60nf055f.pdf
NCE60NF055F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 50 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 51 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 58 nC power conversion, and industria
nce60p50k.pdf
Pb Free Product http //www.ncepower.com NCE60P50K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)
nce60nd09as.pdf
NCE60ND09AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)
nce60nf730f.pdf
NCE60NF730F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust
nce60p04y.pdf
Pb Free Product http //www.ncepower.com NCE60P04Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-4A RDS(ON)
nce60p03y.pdf
NCE60P03Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P03Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-3A RDS(ON)
nce60nf160t.pdf
NCE60NF160T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 145 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industri
nce60nd20ak.pdf
Pb Free Product http //www.ncepower.com NCE60ND20AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND20AK uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features V =60V,I =20A Schematic diagram DS D R
nce6058ak.pdf
http //www.ncepower.com NCE6058AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6058AK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =58A DS D R
nce60p17aq.pdf
NCE60P17AQ http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET General Features Description V = -60V,I = -17A DS D The NCE60P17AQ uses advanced trench technology to provide R
nce60n670k.pdf
NCE60N670K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 620 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.4 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr
nce60p04r.pdf
Pb Free Product http //www.ncepower.com NCE60P04R NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-4.3A Schematic diagram RDS(ON)
nce60p82ak.pdf
NCE60P82AK http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P82AK uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-60V,I =-82A DS D R
nce60td65bp.pdf
Pb Free Product NCE60TD65BP 650V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce603s.pdf
NCE603S www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS =
nce6005as.pdf
NCE6005AS www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channe
nce60p25k.pdf
NCE60P25K www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bri
Otros transistores... SWD4N70K , SWD4N70K2 , SWD4N70L , SWD4N80D , SWD4N80K , SWD540 , NCE60R360D , NCE60R360 , IRF520 , SWD6N60D , SWD6N65D , SWD6N65K , SWD6N70DB , SWD6N80DE , SWD70N10V , SWD740D , SWD7N60K2F .
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