SWD7N65M Todos los transistores

 ..1. Size:908K  samwin
 swn7n65m swd7n65m swf7n65m swha7n65m.pdf

SW7N65M N-channel Enhanced mode TO-251N/TO-252/TO-220F/DFN5*6 MOSFET Features TO-251N TO-252 TO-220F DFN5*6 BVDSS 650V ID 7A High ruggedness 1 8 Low RDS(ON) (Typ 1.2 )@VGS=10V 2 7 RDS(ON) 1.2 6 3 Low Gate Charge (Typ 23nC) 4 5 Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 Application LED, Charger, PC Power 1 TO-251

 7.1. Size:942K  samwin
 swf7n65dd swn7n65dd swd7n65dd.pdf

SW7N65DD N-channel Enhanced mode TO-220F /TO-251N/TO-252 MOSFET Features TO-251N TO-220F TO-252 BVDSS 650V ID 7A High ruggedness Low RDS(ON) (Typ 1.1 )@VGS=10V RDS(ON) 1.1 Low Gate Charge (Typ 28nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application LED, Charge, PC Power 1. Gate 2. Drain 3. So

 7.2. Size:1527K  samwin
 swp7n65d swi7n65d swn7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d.pdf

SW7N65D N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF / TO-262N/DFN5*6 MOSFET Features TO-220 TO-251 TO-251N TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 1.1 ) @VGS=10V RDS(ON) 1.1 1 1 1 1 2 2 Low Gate Charge (Typ 30nC) 2 2 3 3 3 3 Improved dv/dt Capability D DFN5*6 TO-220F TO-220SF TO-262N 100% Avalan

 7.3. Size:1089K  samwin
 swf7n65k2 swi7n65k2 swn7n65k2 swd7n65k2.pdf

SW7N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252 MOSFET Features TO-220F TO-251 TO-251N TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 0.57 )@VGS=10V RDS(ON) 0.57 Low Gate Charge (Typ 14.5nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application Charge,LED,PC Power 3 3 3

 7.4. Size:918K  samwin
 swn7n65da swj7n65da swd7n65da.pdf

SW7N65DA N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET Features TO-262N TO-251N TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 1.4 )@VGS=10V RDS(ON) 1.4 Low Gate Charge (Typ 25nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 1 Application LED , Charge, PC Power 1. Gate 2. Drai

 7.5. Size:1524K  samwin
 sw7n65d swp7n65d swi7n65d swn7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d.pdf

SW7N65D N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF / TO-262N/DFN5*6 MOSFET Features TO-220 TO-251 TO-251N TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 1.1 ) @VGS=10V RDS(ON) 1.1 1 1 1 1 2 2 Low Gate Charge (Typ 30nC) 2 2 3 3 3 3 Improved dv/dt Capability D DFN5*6 TO-220F TO-220SF TO-262N 100% Avalan

 7.6. Size:1121K  samwin
 swf7n65k swmn7n65k swi7n65k swn7n65k swd7n65k swp7n65k.pdf

SW7N65K N-channel Enhanced mode TO-220F/TO-220SF/TO-251/TO- 251N/TO-252/TO-220 MOSFET Features TO-220F TO-220SF TO-251 TO-251N TO-252 TO-220 BVDSS 650V ID 7A High ruggedness Low RDS(ON) (Typ 0.5 )@VGS=10V RDS(ON) 0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 1 2 2 2 2 2 2 Applica

 7.7. Size:725K  samwin
 swmn7n65j swd7n65j.pdf

SW7N65J N-channel Enhanced mode TO-220SF/TO-252 MOSFET Features TO-220SF TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 0.6 )@VGS=10V RDS(ON) 0.6 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 2 Application LED , Charger, PC Power 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MO

 7.8. Size:1401K  samwin
 swp7n65d swi7n65d swn7n65d swui7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d swy7n65d.pdf

SW7N65D N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-251U/TO-252/TO- 220F/TO-220SF/TO-262N/DFN5*6/TO-220FT MOSFET Features TO-220 TO-251 TO-251N TO-251U TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 1.1 ) @VGS=10V RDS(ON) 1.1 1 1 1 1 1 2 2 Low Gate Charge (Typ 30nC) 2 2 2 3 3 3 3 3 Improved dv/dt Capability D TO-220FT TO-262N DFN