SWD7N65M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SWD7N65M
Código: SW7N65M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 154.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 23 nC
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 97 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.38 Ohm
Paquete / Cubierta: TO252
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SWD7N65M Datasheet (PDF)
swn7n65m swd7n65m swf7n65m swha7n65m.pdf
SW7N65MN-channel Enhanced mode TO-251N/TO-252/TO-220F/DFN5*6 MOSFETFeaturesTO-251N TO-252 TO-220F DFN5*6BVDSS : 650VID : 7A High ruggedness1 8 Low RDS(ON) (Typ 1.2)@VGS=10V 2 7RDS(ON) : 1.263 Low Gate Charge (Typ 23nC)4 5 Improved dv/dt Capability 21 1 1 100% Avalanche Tested2 2 23 3 3 Application: LED, Charger, PC Power1TO-251
swf7n65dd swn7n65dd swd7n65dd.pdf
SW7N65DD N-channel Enhanced mode TO-220F /TO-251N/TO-252 MOSFET Features TO-251N TO-220F TO-252 BVDSS : 650V ID : 7A High ruggedness Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.1 Low Gate Charge (Typ 28nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application: LED, Charge, PC Power 1. Gate 2. Drain 3. So
swp7n65d swi7n65d swn7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d.pdf
SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF /TO-262N/DFN5*6 MOSFETFeaturesTO-220 TO-251TO-251N TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11122 Low Gate Charge (Typ 30nC) 223333 Improved dv/dt Capability DDFN5*6TO-220F TO-220SF TO-262N 100% Avalan
swf7n65k2 swi7n65k2 swn7n65k2 swd7n65k2.pdf
SW7N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252 MOSFET Features TO-220F TO-251 TO-251N TO-252 BVDSS : 650V High ruggedness ID : 7A Low RDS(ON) (Typ 0.57)@VGS=10V RDS(ON) : 0.57 Low Gate Charge (Typ 14.5nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application: Charge,LED,PC Power 3 3 3
swn7n65da swj7n65da swd7n65da.pdf
SW7N65DA N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET Features TO-262N TO-251N TO-252 BVDSS : 650V High ruggedness ID : 7A Low RDS(ON) (Typ 1.4)@VGS=10V RDS(ON) : 1.4 Low Gate Charge (Typ 25nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 1 Application: LED , Charge, PC Power 1. Gate 2. Drai
sw7n65d swp7n65d swi7n65d swn7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d.pdf
SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF /TO-262N/DFN5*6 MOSFETFeaturesTO-220 TO-251TO-251N TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11122 Low Gate Charge (Typ 30nC) 223333 Improved dv/dt Capability DDFN5*6TO-220F TO-220SF TO-262N 100% Avalan
swf7n65k swmn7n65k swi7n65k swn7n65k swd7n65k swp7n65k.pdf
SW7N65K N-channel Enhanced mode TO-220F/TO-220SF/TO-251/TO-251N/TO-252/TO-220 MOSFET Features TO-220F TO-220SF TO-251 TO-251N TO-252 TO-220 BVDSS : 650V ID : 7A High ruggedness Low RDS(ON) (Typ 0.5)@VGS=10V RDS(ON) :0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 1 2 2 2 2 2 2 Applica
swmn7n65j swd7n65j.pdf
SW7N65JN-channel Enhanced mode TO-220SF/TO-252 MOSFETFeaturesTO-220SF TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 0.6)@VGS=10VRDS(ON) : 0.6 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 100% Avalanche Tested 1 12 22 Application:LED , Charger, PC Power 3 31. Gate 2. Drain 3. Source1General DescriptionThis power MO
swp7n65d swi7n65d swn7n65d swui7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d swy7n65d.pdf
SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-251U/TO-252/TO-220F/TO-220SF/TO-262N/DFN5*6/TO-220FT MOSFETFeaturesTO-220 TO-251TO-251N TO-251U TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11 112 2 Low Gate Charge (Typ 30nC) 2 22333 33 Improved dv/dt Capability DTO-220FT TO-262N DFN
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
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