SWF10N50K Todos los transistores

 ..1. Size:1355K  samwin
 swf10n50k swp10n50k swt10n50k swn10n50k swd10n50k.pdf

SW10N50K N-channel Enhanced mode TO-220F/TO-220/TO-247/TO-251N/TO-252 MOSFET Features TO-220F TO-220 TO-247 TO-251N TO-252 BVDSS 500V ID 10A High ruggedness Low RDS(ON) (Typ 0.26 )@VGS=10V RDS(ON) 0.26 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 2 2 2 2 2 Application LED, PC Power, Cha

 8.1. Size:1319K  samwin
 swf10n65d swmn10n65d swy10n65d swp10n65d swu10n65d swj10n65d.pdf

SW10N65D N-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFET Features TO-262 TO-262N TO-220F TO-220SF TO-220FT TO-220 BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.9 )@VGS=10V Low Gate Charge (Typ 35nC) RDS(ON) 0.9 Improved dv/dt Capability 100% Avalanche Tested 2 Application UPS,Inverter, 1 1 1 2 2 1 1 1

 8.2. Size:820K  samwin
 swf10n80k2 swn10n80k2 swd10n80k2.pdf

SW10N80K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET TO-220F TO-251N TO-252 BVDSS 800V Features ID 10A High ruggedness RDS(ON) 0.58 Low RDS(ON) (Typ 0.58 )@VGS=10V Low Gate Charge (Typ 27nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 1 2 2 3 3 3 Application LED,Charger,PC Power 1. Gate 2. Drain

 8.3. Size:1328K  samwin
 swp10n65k swf10n65k swn10n65k swd10n65k swu10n65k swmn10n65k.pdf

SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220F TO-251N TO-262 TO-220 TO-252 TO-220SF BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 1 2 1 2 1 2 1 2 1 2 Applicatio

 8.4. Size:692K  samwin
 swf10n80d.pdf

SW10N80D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 800V ID 10A High ruggedness Low RDS(ON) (Typ 1.0 )@VGS=10V RDS(ON) 1.0 Low Gate Charge (Typ 55nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application LED, Charger, SMPS 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MO

 8.5. Size:728K  samwin
 sw10n65 swp10n65 swf10n65.pdf

SAMWIN SW10N65 N-channel MOSFET TO-220F TO-220 BVDSS 650V Features ID 10.0A High ruggedness RDS(ON) 1.1ohm RDS(ON) (Max 1.1 )@VGS=10V Gate Charge (Typ 47nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This

 8.6. Size:905K  samwin
 swf10n70k swd10n70k.pdf

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS 700V ID 10A High ruggedness Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application Charger,LED,TV-Power 1 1. Gate 2. Drain 3. Source General D

 8.7. Size:946K  samwin
 sw10n70k swf10n70k swd10n70k.pdf

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS 700V ID 10A High ruggedness Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application Charge,LED,TV-Power 1 1. Gate 2. Drain 3. Source General De

 8.8. Size:670K  samwin
 swf10n60d.pdf

SW10N60D N-channel Enhanced mode TO-220F MOSFET TO-220F Features BVDSS 600V ID 10A High ruggedness Low RDS(ON) (Typ 0.9 )@VGS=10V RDS(ON) 0.9 Low Gate Charge (Typ 35nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 3 Application UPS Inverter TV-POWER 1 3 1. Gate 2. Drain 3. Source General Description This power

 8.9. Size:952K  samwin
 swf10n65k2 swd10n65k2 swb10n65k2.pdf

SW10N65K2 N-channel Enhanced mode TO-220F/TO-252/TO-263 MOSFET Features TO-220F TO-252 TO-263 BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.3 )@VGS=10V RDS(ON) 0.3 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 1 Application Charge, LED, PC Power 1. Gate 2. Drain 3. Sou