SWF13N70D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SWF13N70D
Código: SW13N70D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 41.7 W
Voltaje máximo drenador - fuente |Vds|: 700 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 13 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 52 nC
Tiempo de subida (tr): 54 nS
Conductancia de drenaje-sustrato (Cd): 170 pF
Resistencia entre drenaje y fuente RDS(on): 0.9 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET SWF13N70D
SWF13N70D Datasheet (PDF)
swf13n70d.pdf
SW13N70D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 700V High ruggedness Low RDS(ON) (Typ 0.7)@VGS=10V ID : 13A Low Gate Charge (Typ 52nC) RDS(ON) : 0.7 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application: LED, TV-Power, Charger 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This pow
swf13n65d.pdf
SW13N65DN-channel Enhanced mode TO-220F MOSFETFeaturesTO-220FBVDSS : 650V High ruggedness Low RDS(ON) (Typ 0.6)@VGS=10VID : 13A Low Gate Charge (Typ 54nC)RDS(ON) : 0.6 Improved dv/dt Capability 100% Avalanche Tested21 Application: LED, Charger, PC Power2311. Gate 2. Drain 3. SourceGeneral Description 3This power MOSFET is produced
swf13n80k.pdf
SW13N80K N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS : 800V Features ID : 13A High ruggedness RDS(ON) : 0.44 Low RDS(ON) (Typ 0.44)@VGS=10V Low Gate Charge (Typ 42nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charger, SMPS 1. Gate 2. Drain 3. Source 3 General Description This powe
swf13n50d swp13n50d.pdf
SW13N50D N-channel Enhancement mode TO-220F/TO-220 MOSFET TO-220F BVDSS : 500V Features TO-220 ID : 13A High ruggedness RDS(ON) : 0.46 RDS(ON) (Typ 0.46)@VGS=10V Gate Charge (Typ 47nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 Application:LED,Charger 3 3 1 1. Gate 2. Drain 3. Source 3 General Description Thi
swf13n60d.pdf
SW13N60D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V High ruggedness Low RDS(ON) (Typ 0.5)@VGS=10V ID : 13A Low Gate Charge (Typ 54nC) RDS(ON) : 0.5 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application: LED, PC Power, Charger 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This pow
swf13n60k2 swi13n60k2 swd13n60k2.pdf
SW13N60K2 N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET BVDSS : 600V Features TO-220F TO-251 TO-252 ID : 13A High ruggedness RDS(ON) : 0.24 Low RDS(ON) (Typ 0.24)@VGS=10V Low Gate Charge (Typ 28nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application: LED, Charger, Adaptor 1. Gate 2. Drain 3
swf13n65k2 swi13n65k2 swd13n65k2 swp13n65k2 swj13n65k2 swb13n65k2 swha13n65k2 swhc13n65k2.pdf
SW13N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N/TO-263/ DFN5*6/QFN8*8 MOSFET Features QFN8*8 TO220F TO251 TO252 TO220 TO262N TO263 DFN5*6 BVDSS : 650V High ruggedness 5 ID : 13A 1 8 Low RDS(ON) (Typ 0.24) 2 7 6 @VGS=10V 3 RDS(ON) : 0.24 1 1 1 1 4 5 1 1 Low Gate Charge (Typ 28nC) 2 2 2 2 1 2 3 4 2 2 3
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