SWF16N60K Todos los transistores

 

SWF16N60K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SWF16N60K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 32.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 48 nS

Cossⓘ - Capacitancia de salida: 62 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm

Encapsulados: TO220F

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SWF16N60K datasheet

 ..1. Size:724K  samwin
 swf16n60k.pdf pdf_icon

SWF16N60K

SW16N60K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 600V ID 16A High ruggedness Low RDS(ON) (Typ 0.21 )@VGS=10V RDS(ON) 0.21 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application LED, Charger, PC Power 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MO

 6.1. Size:590K  samwin
 swf16n60d.pdf pdf_icon

SWF16N60K

SW16N60D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 600V High ruggedness Low RDS(ON) (Typ 0.4 )@VGS=10V ID 16A Low Gate Charge (Typ 68nC) RDS(ON) 0.4 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application LED, PC Power, Charger 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This pow

 7.1. Size:820K  samwin
 sw16n65d swf16n65d.pdf pdf_icon

SWF16N60K

SW16N65D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 650V High ruggedness Low RDS(ON) (Typ 0.46 )@VGS=10V ID 16A Low Gate Charge (Typ 68nC) RDS(ON) 0.46 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Charger, Adaptor, LED 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produce

 7.2. Size:1213K  samwin
 sw16n65k swp16n65k swf16n65k swb16n65k.pdf pdf_icon

SWF16N60K

SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS 650V ID 16A High ruggedness Low RDS(ON) (Typ 0.23 )@VGS=10V RDS(ON) 0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application LED, Charge, PC Power 3 3 3 1. Gate 2. Drain 3. Source

MOSTRAR MÁS

Otros transistores... SWF13N65D , SWF13N65K2 , SWF13N70D , SWF13N80K , SWF14N50D , SWF15N50 , SWF15N50DA , SWF16N60D , IRF640N , SWF16N70D , SWF16N70K , SWF17N50D , SWF17N80K , SWF18N60D , SWF20N50D , SWF20N65D , SWF20N65K .

History: ZVP4525Z | SWF13N80K | ZXMHC3A01N8 | BM2300 | 2SK1365

 

 

 

 

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