SWF4N100U Todos los transistores

 ..1. Size:707K  samwin
 swf4n100u.pdf

SW4N100U N-channel Enhanced mode TO-220F MOSFET Features BVDSS 1000V TO-220F ID 4A High ruggedness Low RDS(ON) (Typ 2.65 )@VGS=10V RDS(ON) 2.65 Low Gate Charge (Typ 33nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application Charger,LED, Adaptor 1 1. Gate 2. Drain 3. Source 3 General Description This pow

 9.1. Size:1007K  samwin
 swf4n65k2 swn4n65k2 swd4n65k2.pdf

SW4N65K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS 650V TO-220F TO-251N TO-252 ID 4 A High ruggedness Low RDS(ON) (Typ 1.10 )@VGS=10V RDS(ON) 1.10 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 Application LED, Charger, Adaptor 2 2 3 3 3 1 1. Gate 2

 9.2. Size:1038K  samwin
 sw4n70d swi4n70d swn4n70d swd4n70d swf4n70d.pdf

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS 700V TO-251 TO-251N TO-252 TO-220F ID 4A High ruggedness Low RDS(ON) (Typ 2.3 )@VGS=10V RDS(ON) 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

 9.3. Size:1038K  samwin
 swi4n70d swn4n70d swd4n70d swf4n70d.pdf

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS 700V TO-251 TO-251N TO-252 TO-220F ID 4A High ruggedness Low RDS(ON) (Typ 2.3 )@VGS=10V RDS(ON) 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

 9.4. Size:855K  samwin
 swsi4n70d1 swn4n70d1 swnc4n70d1 swf4n70d1.pdf

SW4N70D1 N-channel Enhanced mode TO-251S/TO-251N/TO-251N-S2/TO-220F MOSFET Features TO-220F TO-251S TO-251N TO-251N-S2 BVDSS 700V ID 4A High ruggedness Low RDS(ON) (Typ 2.1 )@VGS=10V RDS(ON) 2.1 Low Gate Charge (Typ 18nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application Adapter,LED,Charger 3 3 3 3 1 1. Gate

 9.5. Size:840K  samwin
 swf4n65k swi4n65k swd4n65k.pdf

SW4N65K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 1 )@VGS=10V Low Gate Charge (Typ13 nC) RDS(ON) 1 Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 Application Adapter,LED,Charger, 2 2 2 3 3 3 TV-Power 1 1. Gate 2. Drain 3. Sour

 9.6. Size:958K  samwin
 swf4n60k swi4n60k swd4n60k.pdf

SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS 600V High ruggedness ID 4A Low RDS(ON) (Typ 1 )@VGS=10V RDS(ON) 1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Adapter,LED, Charger 3 3 3 1. Gate 2. Drain 3. Source 1 3

 9.7. Size:965K  samwin
 swf4n60d.pdf

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID 4A High ruggedness Low RDS(ON) (Typ 1.9 ) RDS(ON) 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 1 2 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche Tested Application A

 9.8. Size:907K  samwin
 swf4n70k2 swn4n70k2 swd4n70k2.pdf

SW4N70K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS 700V TO-220F TO-251N TO-252 ID 4 A High ruggedness Low RDS(ON) (Typ 1.15 )@VGS=10V RDS(ON) 1.15 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application LED, Charger, Adaptor 3 3 3 1 1. Gate 2. Drain 3. S

 9.9. Size:839K  samwin
 swf4n80d swn4n80d swd4n80d.pdf

SW4N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS 800V ID 4A High ruggedness Low RDS(ON) (Typ 3.2 )@VGS=10V RDS(ON) 3.2 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Adaptor, LED, Industrial Power 3 3 3 1 1. Gate 2.

 9.10. Size:1046K  samwin
 swf4n70l swn4n70l swd4n70l.pdf

SW4N70L N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS 700V ID 4A High ruggedness Low RDS(ON) (Typ 0.8 )@VGS=10V RDS(ON) 0.8 Low Gate Charge (Typ 18nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 3 1 3 3 Application LED,Charge, Adaptor 1. Gate 2. Drain 3. Sour

 9.11. Size:851K  samwin
 swd4n60da swf4n60da swsi4n60da.pdf

SW4N60DA N-channel Enhanced mode TO-252/TO-220F/TO-251S MOSFET Features TO-252 TO-220F TO-251S BVDSS 600V ID 4A High ruggedness Low RDS(ON) (Typ3.35 )@VGS=10V RDS(ON) 3.35 Low Gate Charge (Typ 9.6nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 2 2 2 3 3 Application DC-DC,LED 3 1 1. Gate 2. Drain 3. Sou

 9.12. Size:830K  samwin
 swn4n50k swd4n50k swf4n50k.pdf

SW4N50K N-channel Enhanced mode TO-251N/TO-252/TO-220F MOSFET Features TO-251N TO-252 TO-220F BVDSS 500V ID 4A High ruggedness Low RDS(ON) (Typ 0.76 )@VGS=10V RDS(ON) 0.76 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 2 2 Application Charger, Adaptor, LED 3 3 3 1. Gate 2. Drain 3. S

 9.13. Size:916K  samwin
 swf4n60d swy4n60d swi4n60d swsi4n60d swmi4n60d swd4n60d.pdf

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID 4A High ruggedness Low RDS(ON) (Typ 1.9 ) RDS(ON) 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 2 1 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche T

 9.14. Size:913K  samwin
 swn4n65dd swnc4n65dd swf4n65dd swmn4n65dd swd4n65dd swyn4n65dd.pdf

SW4N65DD N-channel Enhanced mode TO-251N/TO-251N-S2/TO-220F/TO-220SF /TO-252/TO-220FTN MOSFET Features TO251N TO251N-S2 TO220F TO220SF TO252 TO220FTN BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2.4 )@VGS=10V RDS(ON) 2.4 Low Gate Charge (Typ 16nC) 1 Improved dv/dt Capability 2 1 1 1 2 1 1 3 2 100% Avalanche Tested 2

 9.15. Size:1095K  samwin
 swf4n65da swn4n65da swd4n65da swnb4n65da.pdf

SW4N65DA N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFET Features BVDSS 650V TO-220F TO-251N TO-252 TO-251NX-S4 ID 4A High ruggedness Low RDS(ON) (Typ 3.35 )@VGS=10V RDS(ON) 3.35 Low Gate Charge (Typ 13nC) Improved dv/dt Capability D 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charger, Adaptor, 3 3 3 LED, TV-Pow

 9.16. Size:1049K  samwin
 swf4n65d swn4n65d swsi4n65d swmi4n65d swui4n65d swd4n65d sws4n65d swb4n65d swp4n65d swmqi4n65d.pdf

SW4N65D SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features TO-220F TO-251M TO-251U TO-251N TO-251S BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2 )@VGS=10V 1 1 1 1 1 2 2 2 Low Gate Charge (Typ 18nC) 2 RDS(ON) 2 3 2 3 3 3 3 Improved dv/d

 9.17. Size:738K  samwin
 swf4n70k swi4n70k swd4n70k.pdf

SW4N70K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS 700V High ruggedness ID 4A Low RDS(ON) (Typ 1.0 )@VGS=10V RDS(ON) 1.0 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Charger,LED, Adaptor 3 3 3 1. Gate 2. Drain 3. Source 1 3 G

 9.18. Size:965K  samwin
 swf4n80k swn4n80k swd4n80k.pdf

SW4N80K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-252 TO-220F BVDSS 800V ID 4A High ruggedness Low RDS(ON) (Typ 1.8 )@VGS=10V RDS(ON) 1.8 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 2 2 2 Application LED, Charger, Adaptor 3 3 3 1. Gate 2. Drain 3. Source

 9.19. Size:1046K  samwin
 swf4n80d swn4n80d swd4n80d swj4n80d.pdf

SW4N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-262N MOSFET Features TO-220F TO-251N TO-252 TO-262N BVDSS 800V High ruggedness ID 4A Low RDS(ON) (Typ 3.2 )@VGS=10V RDS(ON) 3.2 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 1 2 2 Application Adaptor, LED, 2 2 3 3 3 3 Industrial Power 1 1. Gate 2