SWF4N50K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SW4N50K N-channel Enhanced mode TO-251N/TO-252/TO-220F MOSFET Features TO-251N TO-252 TO-220F BVDSS : 500V ID : 4A High ruggedness Low RDS(ON) (Typ 0.76)@VGS=10V RDS(ON) : 0.76 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 2 2 Application:Charger, Adaptor, LED 3 3 3 1. Gate 2. Drain 3. S

SW4N65K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS : 650V TO-220F TO-251N TO-252 ID : 4 A High ruggedness Low RDS(ON) (Typ 1.10)@VGS=10V RDS(ON) : 1.10 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 Application:LED, Charger, Adaptor 2 2 3 3 3 1 1. Gate 2

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

SW4N70D1N-channel Enhanced mode TO-251S/TO-251N/TO-251N-S2/TO-220F MOSFETFeatures TO-220FTO-251S TO-251N TO-251N-S2BVDSS : 700VID : 4A High ruggedness Low RDS(ON) (Typ 2.1)@VGS=10VRDS(ON) : 2.1 Low Gate Charge (Typ 18nC) Improved dv/dt Capability 2 100% Avalanche Tested111 1222 2 Application:Adapter,LED,Charger 333 311. Gate

SW4N65K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 1)@VGS=10V Low Gate Charge (Typ13 nC) RDS(ON) :1 Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 Application:Adapter,LED,Charger, 2 2 2 3 3 3 TV-Power 1 1. Gate 2. Drain 3. Sour

SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS : 600V High ruggedness ID : 4A Low RDS(ON) (Typ 1)@VGS=10V RDS(ON) : 1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Adapter,LED, Charger 3 3 3 1. Gate 2. Drain 3. Source 1 3

SW4N60DN-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFETFeaturesBVDSS : 600VTO-251S TO-251M TO-252TO-220F TO-220FT TO-251ID : 4A High ruggedness Low RDS(ON) (Typ 1.9)RDS(ON) : 1.9@VGS=10V Low Gate Charge (Typ 18nC)111 121 212 2 23 Improved dv/dt Capability 2 33 2333 100% Avalanche Tested Application:A

SW4N70K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS :700V TO-220F TO-251N TO-252 ID : 4 A High ruggedness Low RDS(ON) (Typ 1.15)@VGS=10V RDS(ON) :1.15 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charger, Adaptor 3 3 3 1 1. Gate 2. Drain 3. S

SW4N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS : 800V ID : 4A High ruggedness Low RDS(ON) (Typ 3.2)@VGS=10V RDS(ON) : 3.2 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Adaptor, LED, Industrial Power 3 3 3 1 1. Gate 2.

SW4N70L N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS : 700V ID : 4A High ruggedness Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 18nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 3 1 3 3 Application: LED,Charge, Adaptor 1. Gate 2. Drain 3. Sour

SW4N60DA N-channel Enhanced mode TO-252/TO-220F/TO-251S MOSFET Features TO-252 TO-220F TO-251S BVDSS : 600V ID : 4A High ruggedness Low RDS(ON) (Typ3.35)@VGS=10V RDS(ON) : 3.35 Low Gate Charge (Typ 9.6nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 2 2 2 3 3 Application:DC-DC,LED 3 1 1. Gate 2. Drain 3. Sou

SW4N100U N-channel Enhanced mode TO-220F MOSFET Features BVDSS : 1000V TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.65)@VGS=10V RDS(ON) : 2.65 Low Gate Charge (Typ 33nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:Charger,LED, Adaptor 1 1. Gate 2. Drain 3. Source 3 General Description This pow

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS : 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID : 4A High ruggedness Low RDS(ON) (Typ 1.9) RDS(ON) : 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 2 1 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche T

SW4N65DD N-channel Enhanced mode TO-251N/TO-251N-S2/TO-220F/TO-220SF /TO-252/TO-220FTN MOSFET Features TO251N TO251N-S2 TO220F TO220SF TO252 TO220FTN BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 2.4)@VGS=10V RDS(ON) : 2.4 Low Gate Charge (Typ 16nC) 1 Improved dv/dt Capability 2 1 1 1 2 1 1 3 2 100% Avalanche Tested 2

SW4N65DAN-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFETFeaturesBVDSS : 650VTO-220F TO-251N TO-252 TO-251NX-S4ID : 4A High ruggedness Low RDS(ON) (Typ 3.35)@VGS=10VRDS(ON) :3.35 Low Gate Charge (Typ 13nC) Improved dv/dt Capability D1 100% Avalanche Tested 1 1122 223 Application: Charger, Adaptor, 333LED, TV-Pow

SW4N65D SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features TO-220F TO-251M TO-251U TO-251N TO-251S BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 2)@VGS=10V 1 1 1 1 1 2 2 2 Low Gate Charge (Typ 18nC) 2 RDS(ON) : 2 3 2 3 3 3 3 Improved dv/d

SW4N70K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS : 700V High ruggedness ID : 4A Low RDS(ON) (Typ 1.0)@VGS=10V RDS(ON) : 1.0 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charger,LED, Adaptor 3 3 3 1. Gate 2. Drain 3. Source 1 3 G

SW4N80K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-252 TO-220F BVDSS : 800V ID : 4A High ruggedness Low RDS(ON) (Typ 1.8)@VGS=10V RDS(ON) : 1.8 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 2 2 2 Application: LED, Charger, Adaptor 3 3 3 1. Gate 2. Drain 3. Source

SW4N80DN-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-262N MOSFETFeaturesTO-220F TO-251N TO-252 TO-262NBVDSS : 800V High ruggednessID : 4A Low RDS(ON) (Typ 3.2)@VGS=10VRDS(ON) : 3.2 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 100% Avalanche Tested 21 11 12 2 Application:Adaptor, LED, 2 23 33 3Industrial Power11. Gate 2