SWF6N90D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SWF6N90D
Código: SW6N90D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 19.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 42 nC
trⓘ - Tiempo de subida: 32 nS
Cossⓘ - Capacitancia de salida: 124 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
Paquete / Cubierta: TO220F
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SWF6N90D Datasheet (PDF)
swf6n90d swj6n90d.pdf
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SW6N90D N-channel Enhanced mode TO-220F/TO-262N MOSFET TO-220F TO-262N Features BVDSS : 900V ID : 6A High ruggedness Low RDS(ON) (Typ 1.8)@VGS=10V RDS(ON) :1.8 Low Gate Charge (Typ 42nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 3 3 Application:UPS, LED, SMPS 1 1. Gate 2. Drain 3. Source 3 General Description
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SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features TO-251N TO-220F TO-252 TO-262 BVDSS : 800V TO-262N ID : 6A High ruggedness Low RDS(ON) (Typ 2.0)@VGS=10V RDS(ON) : 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 2 1 1 1 1 1 100% Avalanche Tested 2 2 2 2 2 3 3 3 3 3 Application:LED
sw6n70da swn6n70da swsi6n70da swui6n70da swd6n70da swf6n70da swi6n70da swnx6n70da swp6n70da swqi6n70da swmqi6n70da.pdf
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SW6N70DAN-channel Enhanced mode TO-251N/S/U/TO-252/TO-220F/TO-251/TO-251NX/TO-220/TO-251Q /TO-251MQ MOSFETTO251N TO251S TO251U TO252 TO220FFeaturesBVDSS : 700Vl High ruggednessID : 6Al Low RDS(ON) (Typ 1.7)1 1 RDS(ON) : 1.71 1 @VGS=10V 2 22 213 3 23 3l Low Gate Charge (Typ 26nC)32l Improved dv/dt Capability TO220 TO251Q TO251NXTO251 TO251MQ l
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SW6N60D N-channel Enhanced mode TO-220F/TO-252/TO-251N MOSFET Features TO-220F TO-252 TO-251N BVDSS : 600V High ruggedness ID : 6A Low RDS(ON) (Typ 1.4)@VGS=10V RDS(ON) :1.4 Low Gate Charge (Typ 23nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 3 3 3 Application: UPS,Inverter,TV-POWER 1. Gate 2. Drain 3. Source
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SW6N65K N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252/TO-262 /TO-220SF MOSFET Features TO251 TO220F TO251N TO252 TO262 TO220SF BVDSS : 650V High ruggedness ID : 6A Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 1 1 1 2 2 2 2 2 2 3 3 Applicat
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SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS : 700V High ruggedness ID : 6A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charger,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source 1
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SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-220F TO-252 BVDSS : 700V High ruggedness ID : 6A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charge,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source
swf6n60k.pdf
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SW6N60K N-channel Enhanced mode TO-220F MOSFET Features BVDSS : 600V TO-220F ID : 6A High ruggedness Low RDS(ON) (Typ 0.72)@VGS=10V RDS(ON) : 0.72 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 3 Application:Charger,LED 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is
swf6n70d.pdf
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SW6N70D N-channel Enhanced mode TO-220F MOSFET Features BVDSS : 700V TO-220F ID : 6A High ruggedness Low RDS(ON) (Typ 1.4)@VGS=10V RDS(ON) : 1.4 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:Industrial Power,Adaptor, Charger 1 1. Gate 2. Drain 3. Source 3 General Description
swn6n70da swsi6n70da swui6n70da swd6n70da swf6n70da swi6n70da swnx6n70da swp6n70da swqi6n70da swmqi6n70da.pdf
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SW6N70DAN-channel Enhanced mode TO-251N/S/U/TO-252/TO-220F/TO-251/TO-251NX/TO-220/TO-251Q /TO-251MQ MOSFETTO251N TO251S TO251U TO252 TO220FFeaturesBVDSS : 700Vl High ruggednessID : 6Al Low RDS(ON) (Typ 1.7)1 1 RDS(ON) : 1.71 1 @VGS=10V 2 22 213 3 23 3l Low Gate Charge (Typ 26nC)32l Improved dv/dt Capability TO220 TO251Q TO251NXTO251 TO251MQ l
swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf
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SW6N80DN-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFETFeaturesTO-251N TO-220F TO-252 BVDSS : 800VTO-262 TO-262NID : 6A High ruggedness Low RDS(ON) (Typ 2.0)@VGS=10VRDS(ON) : 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 211 1 1 1 100% Avalanche Tested22 2 2 233 3 3 3 Application:LED , Charger, SMPS1.
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SW6N70DBN-channel Enhanced mode TO-220F /TO-252/TO-251N MOSFETFeaturesBVDSS : 700VTO-220F TO-252 TO-251NID : 6A High ruggedness Low RDS(ON) (Typ 1.4)@VGS=10VRDS(ON) : 1.4 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 21 100% Avalanche Tested112223 Application:LED, PC Power, Charger 3311. Gate 2. Drain 3. Source3Gen
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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