SWF7N60K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SWF7N60K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 22.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO220F

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SWF7N60K datasheet

 ..1. Size:843K  samwin
swf7n60k swi7n60k.pdf pdf_icon

SWF7N60K

SW7N60K N-channel Enhanced mode TO-220F/TO-251MOSFET Features TO-220F TO-251 BVDSS 600V High ruggedness ID 7A Low RDS(ON) (Typ 0.5 )@VGS=10V RDS(ON) 0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Adaptor LED 3 3 3 1. Gate 2. Drain 3. Source 1 General Descr

 7.1. Size:999K  samwin
sw7n60d swf7n60d swp7n60d swi7n60d swd7n60d.pdf pdf_icon

SWF7N60K

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS 600V High ruggedness ID 7A RDS(ON) (Typ 1.05 )@VGS=10V RDS(ON) 1.05 Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application UPS Inverter 3 3 3 3 TV

 7.2. Size:1026K  samwin
swf7n60d swp7n60d swi7n60d swd7n60d.pdf pdf_icon

SWF7N60K

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS 600V High ruggedness ID 7A Low RDS(ON) (Typ 1.05 )@VGS=10V RDS(ON) 1.05 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application UPS Inverter 3 3 3

 8.1. Size:942K  samwin
swf7n65dd swn7n65dd swd7n65dd.pdf pdf_icon

SWF7N60K

SW7N65DD N-channel Enhanced mode TO-220F /TO-251N/TO-252 MOSFET Features TO-251N TO-220F TO-252 BVDSS 650V ID 7A High ruggedness Low RDS(ON) (Typ 1.1 )@VGS=10V RDS(ON) 1.1 Low Gate Charge (Typ 28nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application LED, Charge, PC Power 1. Gate 2. Drain 3. So

Otros transistores... SWF5N60D, SWF6N60D, SWF6N60K, SWF6N65K, SWF6N70D, SWF6N70DB, SWF6N90D, SWF740D, IRFP450, SWF7N65DD, SWF7N65K, SWF7N65K2, SWF7N65M, SWF7N70K, SWF830D1, SWF8N60D, SWF8N65D