FDS6690AS Todos los transistores

 ..1. Size:746K  fairchild semi
 fds6690as.pdf

May 2008 tm FDS6690AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 10 A, 30 V. RDS(ON) max= 12 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) max= 15 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

 ..2. Size:777K  onsemi
 fds6690as.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:452K  fairchild semi
 fds6690a.pdf

February 2007 tm FDS6690A Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 11 A, 30 V. RDS(ON) = 12.5 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 17.0 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resi

 7.1. Size:78K  fairchild semi
 fds6690.pdf

February 1997 PRELIMINARY FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features 10 A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V This N Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.0200 @ VGS = 4.5 V. converters using either synchronous or conventional switching Optimize

 8.1. Size:527K  fairchild semi
 fds6699s.pdf

January 2005 FDS6699S 30V N-Channel PowerTrench SyncFET Features General Description 21 A, 30 V Max RDS(ON) = 3.6 m @ VGS = 10 V The FDS6699S is designed to replace a single SO-8 MOSFET Max RDS(ON) = 4.5 m @ VGS = 4.5 V and Schottky diode in synchronous DC DC power supplies. This 30V MOSFET is designed to maximize power conversion Includes SyncFET Schottky body diode

 8.2. Size:458K  fairchild semi
 fds6692a.pdf

January 2010 FDS6692A N-Channel PowerTrench MOSFET 30V, 9A, 11.5m Features General Description RDS(ON) = 11.5m , VGS = 10V, ID = 9A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using RDS(ON) = 14.5m , VGS = 4.5V, ID = 8.2A either synchronous or conventional switching PWM controllers. It has been optimized for

 8.3. Size:114K  fairchild semi
 fds6694.pdf

January 2004 FDS6694 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12 A, 30 V. RDS(ON) = 11 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 13.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Lo

 8.4. Size:1428K  cn vbsemi
 fds6699s.pdf

FDS6699S www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch S

 8.5. Size:822K  cn vbsemi
 fds6694.pdf

FDS6694 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-