SWHA110R06VT Todos los transistores

 ..1. Size:810K  samwin
 swk110r06vt swha110r06vt.pdf

SW110R06VT N-channel Enhanced mode SOP8/DFN5*6 MOSFET Features SOP8 DFN5*6 BVDSS 60V High ruggedness ID 11A 1 8 5 Low RDS(ON) (Typ 11m )@VGS=4.5V 6 2 7 (Typ 10m )@VGS=10V 7 6 RDS(ON) 11m @VGS=4.5V 3 8 4 5 Low Gate Charge (Typ 69nC) 4 10m @VGS=10V 3 Improved dv/dt Capability 2 100% Avalanche Tested 1 D Application Electronic Ballast,

 9.1. Size:997K  samwin
 swi15p02 swd15p02 swh15p02 swha15p02.pdf

SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID -15A Low RDS(ON) (Typ 9.4m )@VGS=-4.5V Low RDS(ON) (Typ 8.1m )@VGS=-10V RDS(ON) 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1

 9.2. Size:1050K  samwin
 swk120r45vt swha120r45vt swi120r45vt.pdf

SW120R45VT N-channel Enhanced mode SOP-8/DFN5*6/TO-251 MOSFET Features High ruggedness DFN5*6 TO-251 SOP-8 BVDSS 45V Low RDS(ON) (Typ 12m )@VGS=4.5V (Typ 10.5m )@VGS=10V 5 ID 12A 6 1 8 7 Low Gate Charge (Typ 45nC) 8 2 7 RDS(ON) 12m @VGS=4.5V Improved dv/dt Capability 6 3 4 4 5 100% Avalanche Tested 3 10.5m @VGS

 9.3. Size:1004K  samwin
 swk15n04v swha15n04v.pdf

SW15N04V N-channel Enhanced mode SOP8/DFN5*6 MOSFET Features BVDSS 40V DFN5*6 SOP8 5 ID 15A High ruggedness 6 1 8 7 Low RDS(ON) (Typ 6.5m )@VGS=4.5V 2 7 8 RDS(ON) 6.5m @ VGS=4.5V 6 3 (Typ 5.8m )@VGS=10V 4 3 4 5 5.8m @ VGS=10V Low Gate Charge (Typ 49nC) 2 1 Improved dv/dt Capability D 100% Avalanche Tested

 9.4. Size:734K  samwin
 swha106r95vs.pdf

SW106R95VS N-channel Enhanced mode DFN5*6 MOSFET Features BVDSS 95V DFN5*6 High ruggedness ID 8A Low RDS(ON) (Typ 12.3m )@VGS=4.5V 1 8 (Typ 11.5m )@VGS=10V RDS(ON) 12.3m @VGS=4.5V 2 7 Low Gate Charge (Typ 123nC) 6 3 11.5m @VGS=10V Improved dv/dt Capability 5 4 100% Avalanche Tested D Application Synchronous Re

 9.5. Size:997K  samwin
 sw15p02 swi15p02 swd15p02 swh15p02 swha15p02.pdf

SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID -15A Low RDS(ON) (Typ 9.4m )@VGS=-4.5V Low RDS(ON) (Typ 8.1m )@VGS=-10V RDS(ON) 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1

 9.6. Size:856K  samwin
 swha120r45vt.pdf

SW120R45VT N-channel Enhanced mode DFN5*6 MOSFET Features High ruggedness DFN5*6 BVDSS 45V Low RDS(ON) (Typ 12m )@VGS=4.5V (Typ 10.5m )@VGS=10V ID 38A 1 8 Low Gate Charge (Typ 45nC) 2 7 RDS(ON) 12m @VGS=4.5V Improved dv/dt Capability 6 3 4 5 100% Avalanche Tested 10.5m @VGS=10V Application DC-DC converter, Motor Control,Synchronous Rect

 9.7. Size:1576K  samwin
 swf13n65k2 swi13n65k2 swd13n65k2 swp13n65k2 swj13n65k2 swb13n65k2 swha13n65k2 swhc13n65k2.pdf

SW13N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N/TO-263/ DFN5*6/QFN8*8 MOSFET Features QFN8*8 TO220F TO251 TO252 TO220 TO262N TO263 DFN5*6 BVDSS 650V High ruggedness 5 ID 13A 1 8 Low RDS(ON) (Typ 0.24 ) 2 7 6 @VGS=10V 3 RDS(ON) 0.24 1 1 1 1 4 5 1 1 Low Gate Charge (Typ 28nC) 2 2 2 2 1 2 3 4 2 2 3

 9.8. Size:993K  samwin
 swk130r06vt swha130r06vt swi130r06vt.pdf

SW130R06VT N-channel Enhanced mode SOP-8/DFN5*6/TO-251 MOSFET Features High ruggedness SOP-8 DFN5*6 TO-251 BVDSS 60V Low RDS(ON) (Typ 14m )@VGS=4.5V (Typ 12m )@VGS=10V 5 ID 58A 6 Low Gate Charge (Typ 55nC) 1 8 7 8 2 7 Improved dv/dt Capability RDS(ON) 14m @ VGS=4.5V 4 6 3 3 100% Avalanche Tested 4 5 2 12m @ VGS=1