SWI7N65K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SWI7N65K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 152.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29 nS
Cossⓘ - Capacitancia de salida: 35 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de SWI7N65K MOSFET
SWI7N65K Datasheet (PDF)
swf7n65k swmn7n65k swi7n65k swn7n65k swd7n65k swp7n65k.pdf

SW7N65K N-channel Enhanced mode TO-220F/TO-220SF/TO-251/TO-251N/TO-252/TO-220 MOSFET Features TO-220F TO-220SF TO-251 TO-251N TO-252 TO-220 BVDSS : 650V ID : 7A High ruggedness Low RDS(ON) (Typ 0.5)@VGS=10V RDS(ON) :0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 1 2 2 2 2 2 2 Applica
swf7n65k2 swi7n65k2 swn7n65k2 swd7n65k2.pdf

SW7N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252 MOSFET Features TO-220F TO-251 TO-251N TO-252 BVDSS : 650V High ruggedness ID : 7A Low RDS(ON) (Typ 0.57)@VGS=10V RDS(ON) : 0.57 Low Gate Charge (Typ 14.5nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application: Charge,LED,PC Power 3 3 3
swp7n65d swi7n65d swn7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d.pdf

SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF /TO-262N/DFN5*6 MOSFETFeaturesTO-220 TO-251TO-251N TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11122 Low Gate Charge (Typ 30nC) 223333 Improved dv/dt Capability DDFN5*6TO-220F TO-220SF TO-262N 100% Avalan
sw7n65d swp7n65d swi7n65d swn7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d.pdf

SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF /TO-262N/DFN5*6 MOSFETFeaturesTO-220 TO-251TO-251N TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11122 Low Gate Charge (Typ 30nC) 223333 Improved dv/dt Capability DDFN5*6TO-220F TO-220SF TO-262N 100% Avalan
Otros transistores... SWI4N65DC , SWI4N65K , SWI4N70K , SWI50P03 , SWI5N30D , SWI6N65K , SWI70N10V , SWI7N60K , IRFP250N , SWI7N65K2 , SWI7N70K , SWI80N04V , SWI80N06V1 , SWI80N08V1 , SWI830D1 , SWI8N65D , SWI8N80K .
History: GSM8411 | BUK7624-55A | SFF80N20MDB
History: GSM8411 | BUK7624-55A | SFF80N20MDB



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP30N10D | AP30N06Y | AP30N06DF | AP30N06D | AP30N03DF | AP30N02D | AP30H04NF | AP30H04DF | AP30G03GD | AP300N04TLG5 | AP2P15MI | AP2N7002A | AP2N30MI | AP2N20MI | AP280N10MP | AP20G03GD
Popular searches
bc639 equivalent | bd138 transistor equivalent | c1096 transistor | c1345 transistor | jcs640c | kn2907a | ncep028n85 datasheet | sw50n06