FDS6911 Todos los transistores

 ..1. Size:110K  fairchild semi
 fds6911.pdf

March 2006 FDS6911 Dual N-Channel Logic Level PowerTrench MOSFET 20V, 7.5A, 13m General Description Features These N-Channel Logic Level MOSFETs are produced rDS(on) = 13 m @ VGS = 10 V using Fairchild Semiconductor s advanced rDS(on) = 17 m @ VGS = 4.5 V PowerTrench process that has been especially tailored Fast switching speed to minimize the on-state resist

 ..2. Size:302K  onsemi
 fds6911.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:75K  fairchild semi
 fds6912.pdf

July 2000 FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs have been 6 A, 30 V. RDS(ON) = 0.028 @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.042 @ VGS = 4.5 V. DC/DC converters using either synchronous or Optimized for use in switc

 8.2. Size:120K  fairchild semi
 fds6912a.pdf

July 2003 FDS6912A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 35 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Fast switchi

 8.3. Size:112K  fairchild semi
 fds6910.pdf

September 2004 FDS6910 Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 7.5 A, 30 V. RDS(ON) = 13 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 17 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and

 8.4. Size:182K  onsemi
 fds6912a.pdf

FDS6912A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 V using ON Semiconductor s advanced RDS(ON) = 35 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Fast switching speed supe

 8.5. Size:172K  onsemi
 fds6910.pdf

FDS6910 Dual N-Channel Logic Level PowerTrench MOSFET Features General Description 7.5 A, 30 V. RDS(ON) = 13 m @ VGS = 10 V RDS(ON) = 17 m @ VGS = 4.5 V These N-Channel Logic Level MOSFETs are produced Fast switching speed using ON Semiconductor s advanced PowerTrench process that has been especially tailored Low gate charge to minimize the o